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Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor

Wernersson, Lars-Erik LU ; Yamamoto, R; Miyamoto, Y; Lind, Erik LU ; Pietzonka, I; Seifert, Werner LU ; Samuelson, Lars LU and Furuya, K (2002) In Institute of Physics Conference Series 170. p.81-85
Abstract
We report on the formation of an attractive potential around buried metal wires in a novel design for the Hot Electron Transistor (HET). In this device, the doped base layer in the HET is replaced by an embedded metal grating, which is forward biased beyond flat band conditions in order to efficiently extract carriers from the emitter into the active region. These carriers are collected in a Schottky Collector contact. By tuning the gate and collector voltages, the potential profile around the wires can be repulsive as well as attractive. This is a key result for the realisation of a Biprism device.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Institute of Physics Conference Series
volume
170
pages
81 - 85
publisher
IOP Publishing
external identifiers
  • wos:000179011200013
ISSN
0951-3248
language
English
LU publication?
yes
id
2cfed6fb-84a1-49f6-9708-247fef6c2501 (old id 324566)
date added to LUP
2007-11-16 17:12:38
date last changed
2016-04-16 04:56:46
@article{2cfed6fb-84a1-49f6-9708-247fef6c2501,
  abstract     = {We report on the formation of an attractive potential around buried metal wires in a novel design for the Hot Electron Transistor (HET). In this device, the doped base layer in the HET is replaced by an embedded metal grating, which is forward biased beyond flat band conditions in order to efficiently extract carriers from the emitter into the active region. These carriers are collected in a Schottky Collector contact. By tuning the gate and collector voltages, the potential profile around the wires can be repulsive as well as attractive. This is a key result for the realisation of a Biprism device.},
  author       = {Wernersson, Lars-Erik and Yamamoto, R and Miyamoto, Y and Lind, Erik and Pietzonka, I and Seifert, Werner and Samuelson, Lars and Furuya, K},
  issn         = {0951-3248},
  language     = {eng},
  pages        = {81--85},
  publisher    = {IOP Publishing},
  series       = {Institute of Physics Conference Series},
  title        = {Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor},
  volume       = {170},
  year         = {2002},
}