Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
(2002) In Institute of Physics Conference Series 170. p.81-85- Abstract
- We report on the formation of an attractive potential around buried metal wires in a novel design for the Hot Electron Transistor (HET). In this device, the doped base layer in the HET is replaced by an embedded metal grating, which is forward biased beyond flat band conditions in order to efficiently extract carriers from the emitter into the active region. These carriers are collected in a Schottky Collector contact. By tuning the gate and collector voltages, the potential profile around the wires can be repulsive as well as attractive. This is a key result for the realisation of a Biprism device.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/324566
- author
- Wernersson, Lars-Erik LU ; Yamamoto, R ; Miyamoto, Y ; Lind, Erik LU ; Pietzonka, I ; Seifert, Werner LU ; Samuelson, Lars LU and Furuya, K
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Institute of Physics Conference Series
- volume
- 170
- pages
- 81 - 85
- publisher
- IOP Publishing
- external identifiers
-
- wos:000179011200013
- ISSN
- 0951-3248
- language
- English
- LU publication?
- yes
- id
- 2cfed6fb-84a1-49f6-9708-247fef6c2501 (old id 324566)
- date added to LUP
- 2016-04-01 16:49:49
- date last changed
- 2018-11-21 20:44:32
@article{2cfed6fb-84a1-49f6-9708-247fef6c2501, abstract = {{We report on the formation of an attractive potential around buried metal wires in a novel design for the Hot Electron Transistor (HET). In this device, the doped base layer in the HET is replaced by an embedded metal grating, which is forward biased beyond flat band conditions in order to efficiently extract carriers from the emitter into the active region. These carriers are collected in a Schottky Collector contact. By tuning the gate and collector voltages, the potential profile around the wires can be repulsive as well as attractive. This is a key result for the realisation of a Biprism device.}}, author = {{Wernersson, Lars-Erik and Yamamoto, R and Miyamoto, Y and Lind, Erik and Pietzonka, I and Seifert, Werner and Samuelson, Lars and Furuya, K}}, issn = {{0951-3248}}, language = {{eng}}, pages = {{81--85}}, publisher = {{IOP Publishing}}, series = {{Institute of Physics Conference Series}}, title = {{Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor}}, volume = {{170}}, year = {{2002}}, }