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Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes

Wernersson, Lars-Erik LU ; Gustafson, Boel LU ; Gustafsson, Anders LU ; Borgström, Magnus LU ; Pietzonka, I; Sass, T; Seifert, Werner LU and Samuelson, Lars LU (2002) In Applied Surface Science 190(1). p.252-257
Abstract
We have studied the epitaxial growth and electrical performance of Al-free, GaAs-based, resonant tunnelling diodes (RTDs) including thin barriers of GaInP, GO, or GaAsxP1-x. n-Type tunnelling diodes have been fabricated and the symmetry in the current-voltage (I-V) characteristics, as well as the peak-to-valley ratios, are found to be sensitive probes for the inter-face quality in the heterostructures. For GaInP RTDs, we show that the introduction of Gap intermediate layers is crucial for the realisation. of a useful tunnelling current. RTDs including thin barriers (less than about 10 monolayers (ML)) of Gap are realised, but the strong mismatch between the materials limit the useful thickness. Finally, RTDs with GaAslambdaP1-x alloys are... (More)
We have studied the epitaxial growth and electrical performance of Al-free, GaAs-based, resonant tunnelling diodes (RTDs) including thin barriers of GaInP, GO, or GaAsxP1-x. n-Type tunnelling diodes have been fabricated and the symmetry in the current-voltage (I-V) characteristics, as well as the peak-to-valley ratios, are found to be sensitive probes for the inter-face quality in the heterostructures. For GaInP RTDs, we show that the introduction of Gap intermediate layers is crucial for the realisation. of a useful tunnelling current. RTDs including thin barriers (less than about 10 monolayers (ML)) of Gap are realised, but the strong mismatch between the materials limit the useful thickness. Finally, RTDs with GaAslambdaP1-x alloys are fabricated showing the best peak-to-valley ratio of the diodes (about 5), as well as a symmetric I-V characteristics. The electrical data are further compared to studies by transmission electron microscopy (TEM) in the various material systems. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
GaAs/GaInP, GaAs/GaP, MOVPE, RTD, resonant tunnelling, GaAs/GaAsP
in
Applied Surface Science
volume
190
issue
1
pages
252 - 257
publisher
Elsevier
external identifiers
  • wos:000176520700046
  • scopus:0037187220
ISSN
1873-5584
DOI
10.1016/S0169-4332(01)00917-5
language
English
LU publication?
yes
id
769f5654-18f7-46dc-b2d3-59a9d75f69a4 (old id 334619)
date added to LUP
2007-11-09 15:39:19
date last changed
2017-07-30 03:35:36
@article{769f5654-18f7-46dc-b2d3-59a9d75f69a4,
  abstract     = {We have studied the epitaxial growth and electrical performance of Al-free, GaAs-based, resonant tunnelling diodes (RTDs) including thin barriers of GaInP, GO, or GaAsxP1-x. n-Type tunnelling diodes have been fabricated and the symmetry in the current-voltage (I-V) characteristics, as well as the peak-to-valley ratios, are found to be sensitive probes for the inter-face quality in the heterostructures. For GaInP RTDs, we show that the introduction of Gap intermediate layers is crucial for the realisation. of a useful tunnelling current. RTDs including thin barriers (less than about 10 monolayers (ML)) of Gap are realised, but the strong mismatch between the materials limit the useful thickness. Finally, RTDs with GaAslambdaP1-x alloys are fabricated showing the best peak-to-valley ratio of the diodes (about 5), as well as a symmetric I-V characteristics. The electrical data are further compared to studies by transmission electron microscopy (TEM) in the various material systems.},
  author       = {Wernersson, Lars-Erik and Gustafson, Boel and Gustafsson, Anders and Borgström, Magnus and Pietzonka, I and Sass, T and Seifert, Werner and Samuelson, Lars},
  issn         = {1873-5584},
  keyword      = {GaAs/GaInP,GaAs/GaP,MOVPE,RTD,resonant tunnelling,GaAs/GaAsP},
  language     = {eng},
  number       = {1},
  pages        = {252--257},
  publisher    = {Elsevier},
  series       = {Applied Surface Science},
  title        = {Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes},
  url          = {http://dx.doi.org/10.1016/S0169-4332(01)00917-5},
  volume       = {190},
  year         = {2002},
}