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A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

Ohki, S; Funato, H; Suhara, M; Okumura, T; Wernersson, Lars-Erik LU and Seifert, Werner LU (2002) In Applied Surface Science 190(1-4). p.288-293
Abstract
A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
heterointerface, strain barrier, band offset, GaAsP/GaAs, triple-barrier resonant tunneling diodes, thermionic emission
in
Applied Surface Science
volume
190
issue
1-4
pages
288 - 293
publisher
Elsevier
external identifiers
  • wos:000176520700053
  • scopus:0037042007
ISSN
1873-5584
DOI
10.1016/S0169-4332(01)00870-4
language
English
LU publication?
yes
id
25c2e901-8769-44fb-b765-e6367ae9f002 (old id 334628)
date added to LUP
2007-11-08 07:46:34
date last changed
2017-01-01 04:51:30
@article{25c2e901-8769-44fb-b765-e6367ae9f002,
  abstract     = {A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.},
  author       = {Ohki, S and Funato, H and Suhara, M and Okumura, T and Wernersson, Lars-Erik and Seifert, Werner},
  issn         = {1873-5584},
  keyword      = {heterointerface,strain barrier,band offset,GaAsP/GaAs,triple-barrier resonant tunneling diodes,thermionic emission},
  language     = {eng},
  number       = {1-4},
  pages        = {288--293},
  publisher    = {Elsevier},
  series       = {Applied Surface Science},
  title        = {A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes},
  url          = {http://dx.doi.org/10.1016/S0169-4332(01)00870-4},
  volume       = {190},
  year         = {2002},
}