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Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings

Ohlsson, Jonas LU ; Malm, Jan-Olle LU ; Gustafsson, Anders LU orcid and Samuelson, Lars LU (2002) In Applied Physics Letters 80(24). p.4546-4548
Abstract
We demonstrate a method for growth of GaP nanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-mum-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emission scanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaP nanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence.
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
80
issue
24
pages
4546 - 4548
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000176128100022
  • scopus:79955999172
ISSN
0003-6951
DOI
10.1063/1.1485311
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
id
74f970bf-1bed-437f-b162-4babec069b84 (old id 335608)
date added to LUP
2016-04-01 12:18:25
date last changed
2023-09-02 03:02:03
@article{74f970bf-1bed-437f-b162-4babec069b84,
  abstract     = {{We demonstrate a method for growth of GaP nanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-mum-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emission scanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaP nanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence.}},
  author       = {{Ohlsson, Jonas and Malm, Jan-Olle and Gustafsson, Anders and Samuelson, Lars}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{24}},
  pages        = {{4546--4548}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings}},
  url          = {{http://dx.doi.org/10.1063/1.1485311}},
  doi          = {{10.1063/1.1485311}},
  volume       = {{80}},
  year         = {{2002}},
}