Advanced

Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings

Ohlsson, Jonas LU ; Malm, Jan-Olle LU ; Gustafsson, Anders LU and Samuelson, Lars LU (2002) In Applied Physics Letters 80(24). p.4546-4548
Abstract
We demonstrate a method for growth of GaP nanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-mum-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emission scanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaP nanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
80
issue
24
pages
4546 - 4548
publisher
American Institute of Physics
external identifiers
  • wos:000176128100022
  • scopus:79955999172
ISSN
0003-6951
DOI
10.1063/1.1485311
language
English
LU publication?
yes
id
74f970bf-1bed-437f-b162-4babec069b84 (old id 335608)
date added to LUP
2007-11-02 13:50:17
date last changed
2017-01-01 05:01:40
@article{74f970bf-1bed-437f-b162-4babec069b84,
  abstract     = {We demonstrate a method for growth of GaP nanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-mum-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emission scanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaP nanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence.},
  author       = {Ohlsson, Jonas and Malm, Jan-Olle and Gustafsson, Anders and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  number       = {24},
  pages        = {4546--4548},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings},
  url          = {http://dx.doi.org/10.1063/1.1485311},
  volume       = {80},
  year         = {2002},
}