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Electrochemical etch-stop technique for silicon membranes with p- and n-type regions and its application to neural sieve electrodes

Wallman, Lars LU ; Bengtsson, Jonas LU ; Danielsen, Nils LU and Laurell, Thomas LU (2002) In Journal of Micromechanics and Microengineering 12(3). p.265-270
Abstract
In this study the field effects on electrochemic ally controlled silicon etching in KOH during three- and four-electrode pn etch-stop have been investigated. When a p-doped bulk area is surrounded by n-doped silicon and the n-doped silicon is electrochemic ally passivated, small lines of bulk silicon in between the n-doped silicon would not etch. The size of the bulk silicon that did not etch could be moderated by the applied potential on the n-doped silicon during pn etching. For the three-electrode system the size of the electric field passivated bulk silicon could be controlled for line widths ranging between 60 and 100 mum. When a four-electrode system was used and the p-doped bulk silicon was forced to a more negative potential, it... (More)
In this study the field effects on electrochemic ally controlled silicon etching in KOH during three- and four-electrode pn etch-stop have been investigated. When a p-doped bulk area is surrounded by n-doped silicon and the n-doped silicon is electrochemic ally passivated, small lines of bulk silicon in between the n-doped silicon would not etch. The size of the bulk silicon that did not etch could be moderated by the applied potential on the n-doped silicon during pn etching. For the three-electrode system the size of the electric field passivated bulk silicon could be controlled for line widths ranging between 60 and 100 mum. When a four-electrode system was used and the p-doped bulk silicon was forced to a more negative potential, it was possible to etch lines of bulk silicon down to 40 mum widths. This field-restricted pn etch-stop can be used for fabricating thin membrane structures with densely spaced n-doped regions that can be individually addressed by electronics. One application is the fabrication of neural sieve electrodes which comprise a pn etch-stopped membrane containing several phosphorous-doped individually addressable recording electrodes. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Micromechanics and Microengineering
volume
12
issue
3
pages
265 - 270
publisher
IOP Publishing
external identifiers
  • wos:000176057700011
  • scopus:0036571726
ISSN
0960-1317
DOI
10.1088/0960-1317/12/3/311
language
English
LU publication?
yes
id
cdcd3850-8c48-4df6-a4d2-523c1f520aa1 (old id 336014)
date added to LUP
2007-11-19 14:34:16
date last changed
2017-01-01 07:19:01
@article{cdcd3850-8c48-4df6-a4d2-523c1f520aa1,
  abstract     = {In this study the field effects on electrochemic ally controlled silicon etching in KOH during three- and four-electrode pn etch-stop have been investigated. When a p-doped bulk area is surrounded by n-doped silicon and the n-doped silicon is electrochemic ally passivated, small lines of bulk silicon in between the n-doped silicon would not etch. The size of the bulk silicon that did not etch could be moderated by the applied potential on the n-doped silicon during pn etching. For the three-electrode system the size of the electric field passivated bulk silicon could be controlled for line widths ranging between 60 and 100 mum. When a four-electrode system was used and the p-doped bulk silicon was forced to a more negative potential, it was possible to etch lines of bulk silicon down to 40 mum widths. This field-restricted pn etch-stop can be used for fabricating thin membrane structures with densely spaced n-doped regions that can be individually addressed by electronics. One application is the fabrication of neural sieve electrodes which comprise a pn etch-stopped membrane containing several phosphorous-doped individually addressable recording electrodes.},
  author       = {Wallman, Lars and Bengtsson, Jonas and Danielsen, Nils and Laurell, Thomas},
  issn         = {0960-1317},
  language     = {eng},
  number       = {3},
  pages        = {265--270},
  publisher    = {IOP Publishing},
  series       = {Journal of Micromechanics and Microengineering},
  title        = {Electrochemical etch-stop technique for silicon membranes with p- and n-type regions and its application to neural sieve electrodes},
  url          = {http://dx.doi.org/10.1088/0960-1317/12/3/311},
  volume       = {12},
  year         = {2002},
}