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Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces

Lind, Erik LU ; Wernersson, Lars-Erik LU ; Pietzonka, Ines and Seifert, Werner LU (2002) In IEEE Transactions on Electron Devices 49(6). p.1066-1069
Abstract
A resonant tunneling permeable base transistor has been realized experimentally by overgrowing a tungsten grating placed in direct vicinity to a double barrier heterostructure. In this way, we can directly modulate the tunneling current via an embedded gate. Since the quality of the overgrown interface is critical, special attention is paid to this issue, and the effect of different wet etchants prior to overgrowth is studied both by electrical measurements and by the use of an atomic force microscope. A clear dependence of the electrical properties and the crystal quality on the etchants used is found. This is a key result for the realization of our resonant tunneling device.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
resonant tunneling, field-effect transistors, gallium arsenide, transistors, surface cleaning, tungsten
in
IEEE Transactions on Electron Devices
volume
49
issue
6
pages
1066 - 1069
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000175819600016
  • scopus:0036611378
ISSN
0018-9383
language
English
LU publication?
yes
id
ec583336-5bbd-40b0-b729-3d1a9314850e (old id 337236)
date added to LUP
2007-11-14 14:37:17
date last changed
2017-01-01 06:41:44
@article{ec583336-5bbd-40b0-b729-3d1a9314850e,
  abstract     = {A resonant tunneling permeable base transistor has been realized experimentally by overgrowing a tungsten grating placed in direct vicinity to a double barrier heterostructure. In this way, we can directly modulate the tunneling current via an embedded gate. Since the quality of the overgrown interface is critical, special attention is paid to this issue, and the effect of different wet etchants prior to overgrowth is studied both by electrical measurements and by the use of an atomic force microscope. A clear dependence of the electrical properties and the crystal quality on the etchants used is found. This is a key result for the realization of our resonant tunneling device.},
  author       = {Lind, Erik and Wernersson, Lars-Erik and Pietzonka, Ines and Seifert, Werner},
  issn         = {0018-9383},
  keyword      = {resonant tunneling,field-effect transistors,gallium arsenide,transistors,surface cleaning,tungsten},
  language     = {eng},
  number       = {6},
  pages        = {1066--1069},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Electron Devices},
  title        = {Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces},
  volume       = {49},
  year         = {2002},
}