Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
(2002) In IEEE Transactions on Electron Devices 49(6). p.1066-1069- Abstract
- A resonant tunneling permeable base transistor has been realized experimentally by overgrowing a tungsten grating placed in direct vicinity to a double barrier heterostructure. In this way, we can directly modulate the tunneling current via an embedded gate. Since the quality of the overgrown interface is critical, special attention is paid to this issue, and the effect of different wet etchants prior to overgrowth is studied both by electrical measurements and by the use of an atomic force microscope. A clear dependence of the electrical properties and the crystal quality on the etchants used is found. This is a key result for the realization of our resonant tunneling device.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/337236
- author
- Lind, Erik LU ; Wernersson, Lars-Erik LU ; Pietzonka, Ines and Seifert, Werner LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- resonant tunneling, field-effect transistors, gallium arsenide, transistors, surface cleaning, tungsten
- in
- IEEE Transactions on Electron Devices
- volume
- 49
- issue
- 6
- pages
- 1066 - 1069
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000175819600016
- scopus:0036611378
- ISSN
- 0018-9383
- language
- English
- LU publication?
- yes
- id
- ec583336-5bbd-40b0-b729-3d1a9314850e (old id 337236)
- date added to LUP
- 2016-04-01 15:32:32
- date last changed
- 2024-05-23 14:48:11
@article{ec583336-5bbd-40b0-b729-3d1a9314850e, abstract = {{A resonant tunneling permeable base transistor has been realized experimentally by overgrowing a tungsten grating placed in direct vicinity to a double barrier heterostructure. In this way, we can directly modulate the tunneling current via an embedded gate. Since the quality of the overgrown interface is critical, special attention is paid to this issue, and the effect of different wet etchants prior to overgrowth is studied both by electrical measurements and by the use of an atomic force microscope. A clear dependence of the electrical properties and the crystal quality on the etchants used is found. This is a key result for the realization of our resonant tunneling device.}}, author = {{Lind, Erik and Wernersson, Lars-Erik and Pietzonka, Ines and Seifert, Werner}}, issn = {{0018-9383}}, keywords = {{resonant tunneling; field-effect transistors; gallium arsenide; transistors; surface cleaning; tungsten}}, language = {{eng}}, number = {{6}}, pages = {{1066--1069}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Electron Devices}}, title = {{Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces}}, volume = {{49}}, year = {{2002}}, }