Advanced

Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

Wernersson, Lars-Erik LU ; Borgström, Magnus LU ; Gustafson, Boel LU ; Gustafsson, Anders LU ; Pietzonka, I; Pistol, Mats-Erik LU ; Sass, T; Seifert, Werner LU and Samuelson, Lars LU (2002) In Applied Physics Letters 80(10). p.1841-1843
Abstract
We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
80
issue
10
pages
1841 - 1843
publisher
American Institute of Physics
external identifiers
  • wos:000174181800054
  • scopus:79956000886
ISSN
0003-6951
DOI
10.1063/1.1459113
language
English
LU publication?
yes
id
5bc6e8af-49e6-46da-8e48-1a370f027ebe (old id 342649)
date added to LUP
2007-11-09 15:44:41
date last changed
2017-01-01 04:56:08
@article{5bc6e8af-49e6-46da-8e48-1a370f027ebe,
  abstract     = {We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.},
  author       = {Wernersson, Lars-Erik and Borgström, Magnus and Gustafson, Boel and Gustafsson, Anders and Pietzonka, I and Pistol, Mats-Erik and Sass, T and Seifert, Werner and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  number       = {10},
  pages        = {1841--1843},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes},
  url          = {http://dx.doi.org/10.1063/1.1459113},
  volume       = {80},
  year         = {2002},
}