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Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111))

Håkanson, Ulf LU ; Ohlsson, Jonas LU ; Montelius, Lars LU and Samuelson, Lars LU (2002) 6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 20(1). p.226-229
Abstract
Using scanning electron microscopy guidance, atomically resolved scanning tunneling microscopy investigations inside openings formed during the decomposition of a thick SiO2 film on a Si(111) surface have been performed. We report, for the first time, the presence of Ni atoms inside self-formed openings. The SiO2 decomposition as a function of annealing temperature and time was studied. By comparing self-formed and lithographically designed openings in the SiO2 layer we have shown that Ni contamination of the SiO2/Si(111) has a profound effect on the formation of self-induced lateral oxide openings. (C) 2002 American Vacuum Society.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Ultrahigh vacuum scanning tunneling microscopy (UHVSTM)
in
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
volume
20
issue
1
pages
226 - 229
publisher
A V S Amer Inst Physics
conference name
6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
external identifiers
  • wos:000173985500040
  • scopus:0036118696
ISSN
1520-8567
1071-1023
DOI
10.1116/1.1432968
language
English
LU publication?
yes
id
7c1d7d7c-662d-41c5-882e-8237deee5430 (old id 342781)
date added to LUP
2007-11-27 14:10:14
date last changed
2017-01-01 04:58:48
@inproceedings{7c1d7d7c-662d-41c5-882e-8237deee5430,
  abstract     = {Using scanning electron microscopy guidance, atomically resolved scanning tunneling microscopy investigations inside openings formed during the decomposition of a thick SiO2 film on a Si(111) surface have been performed. We report, for the first time, the presence of Ni atoms inside self-formed openings. The SiO2 decomposition as a function of annealing temperature and time was studied. By comparing self-formed and lithographically designed openings in the SiO2 layer we have shown that Ni contamination of the SiO2/Si(111) has a profound effect on the formation of self-induced lateral oxide openings. (C) 2002 American Vacuum Society.},
  author       = {Håkanson, Ulf and Ohlsson, Jonas and Montelius, Lars and Samuelson, Lars},
  booktitle    = {JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B},
  issn         = {1520-8567},
  keyword      = {Ultrahigh vacuum scanning tunneling microscopy (UHVSTM)},
  language     = {eng},
  number       = {1},
  pages        = {226--229},
  publisher    = {A V S Amer Inst Physics},
  title        = {Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111))},
  url          = {http://dx.doi.org/10.1116/1.1432968},
  volume       = {20},
  year         = {2002},
}