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Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence

Håkanson, Ulf LU ; Johansson, Mikael LU ; Persson, Jonas LU ; Johansson, Jonas LU ; Pistol, Mats-Erik LU ; Montelius, Lars LU and Samuelson, Lars LU (2002) In Applied Physics Letters 80(3). p.494-496
Abstract
We have studied the optical and structural properties of single, self-assembled InP quantum dots (QDs) overgrown with nominally 5 nm of GaInP, using an ultrahigh-vacuum scanning tunneling microscope (STM) operating at low temperatures. The STM is combined with an optical detection system, which allows us to detect the emission from individual quantum dots with high spatial resolution. We find that the InP QDs act as nucleation points for the GaInP overgrowth, where the strain induced by the overlayer give rise to a QD emission around 1.46 eV. (C) 2002 American Institute of Physics.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
80
issue
3
pages
494 - 496
publisher
American Institute of Physics
external identifiers
  • wos:000173278400052
  • scopus:79956020368
ISSN
0003-6951
DOI
10.1063/1.1435796
language
English
LU publication?
yes
id
66284a46-0184-401c-ba2e-1a4e18de0d5f (old id 345952)
date added to LUP
2007-08-23 08:36:39
date last changed
2017-06-11 03:26:34
@article{66284a46-0184-401c-ba2e-1a4e18de0d5f,
  abstract     = {We have studied the optical and structural properties of single, self-assembled InP quantum dots (QDs) overgrown with nominally 5 nm of GaInP, using an ultrahigh-vacuum scanning tunneling microscope (STM) operating at low temperatures. The STM is combined with an optical detection system, which allows us to detect the emission from individual quantum dots with high spatial resolution. We find that the InP QDs act as nucleation points for the GaInP overgrowth, where the strain induced by the overlayer give rise to a QD emission around 1.46 eV. (C) 2002 American Institute of Physics.},
  author       = {Håkanson, Ulf and Johansson, Mikael and Persson, Jonas and Johansson, Jonas and Pistol, Mats-Erik and Montelius, Lars and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  number       = {3},
  pages        = {494--496},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence},
  url          = {http://dx.doi.org/10.1063/1.1435796},
  volume       = {80},
  year         = {2002},
}