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A novel device principle for nanoelectronics

Xu, Hongqi LU ; Shorubalko, Ivan LU ; Maximov, Ivan LU ; Seifert, Werner LU ; Omling, Pär LU and Samuelson, Lars LU (2002) In Materials Science and Engineering C: Materials for Biological Applications 19(1-2). p.417-420
Abstract
We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also... (More)
We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also shown that the TBJ devices show a good parabolic behavior for V-c vs. V in a large range of voltages V. (Less)
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organization
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Contribution to journal
publication status
published
subject
keywords
300 K, parabolic behavior, Ga<sub>0.25</sub>In<sub>0.75</sub>As-InP, voltage, novel electrical characteristic, symmetric three-terminal device, broken device symmetry, 2DEG, semiconductor QW, push-pull fashion, symmetric TBJ device, three-terminal ballistic junctions, nanoelectronics, room temperature electrical property
in
Materials Science and Engineering C: Materials for Biological Applications
volume
19
issue
1-2
pages
417 - 420
publisher
Elsevier
external identifiers
  • wos:000173080700082
  • scopus:0037005972
ISSN
0928-4931
DOI
10.1016/S0928-4931(01)00435-0
language
English
LU publication?
yes
id
1dd72d0b-49e2-493a-818b-9310f52b7645 (old id 346069)
date added to LUP
2007-11-19 12:49:25
date last changed
2017-01-01 07:08:53
@article{1dd72d0b-49e2-493a-818b-9310f52b7645,
  abstract     = {We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also shown that the TBJ devices show a good parabolic behavior for V-c vs. V in a large range of voltages V.},
  author       = {Xu, Hongqi and Shorubalko, Ivan and Maximov, Ivan and Seifert, Werner and Omling, Pär and Samuelson, Lars},
  issn         = {0928-4931},
  keyword      = {300 K,parabolic behavior,Ga<sub>0.25</sub>In<sub>0.75</sub>As-InP,voltage,novel electrical characteristic,symmetric three-terminal device,broken device symmetry,2DEG,semiconductor QW,push-pull fashion,symmetric TBJ device,three-terminal ballistic junctions,nanoelectronics,room temperature electrical property},
  language     = {eng},
  number       = {1-2},
  pages        = {417--420},
  publisher    = {Elsevier},
  series       = {Materials Science and Engineering C: Materials for Biological Applications},
  title        = {A novel device principle for nanoelectronics},
  url          = {http://dx.doi.org/10.1016/S0928-4931(01)00435-0},
  volume       = {19},
  year         = {2002},
}