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Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor

Lind, Erik LU ; Persson, Ann LU ; Samuelson, Lars LU and Wernersson, Lars-Erik LU (2006) In Nano Letters 6(9). p.1842-1846
Abstract
An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10 000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 mu A/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm(2)/Vs.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
6
issue
9
pages
1842 - 1846
publisher
The American Chemical Society
external identifiers
  • pmid:16967988
  • wos:000240465100002
  • scopus:33749684169
ISSN
1530-6992
DOI
10.1021/nl052468b
language
English
LU publication?
yes
id
35883913-cb7d-45f2-bd0c-a9fbc8aba56d (old id 393998)
date added to LUP
2007-10-08 15:17:22
date last changed
2019-01-20 05:16:34
@article{35883913-cb7d-45f2-bd0c-a9fbc8aba56d,
  abstract     = {An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10 000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 mu A/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm(2)/Vs.},
  author       = {Lind, Erik and Persson, Ann and Samuelson, Lars and Wernersson, Lars-Erik},
  issn         = {1530-6992},
  language     = {eng},
  number       = {9},
  pages        = {1842--1846},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor},
  url          = {http://dx.doi.org/10.1021/nl052468b},
  volume       = {6},
  year         = {2006},
}