MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
(2013) In Journal of Crystal Growth 374. p.43-48- Abstract
- We demonstrate MOVPE-growth of InAs/AlAs0.16Sb0.84/GaSb and InAs/AlAs0.16Sb0.84/InAs heterostructures of excellent quality as observed by transmission electron microscopy and x-ray diffraction 2-theta-omega and rocking curve scans with full width at half maximum routinely below 100 arcsec. Key points regarding interface control for heteroepitaxial nucleation are reviewed and the choice of suitable precursors to minimize the incorporation of C and O are discussed.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3735420
- author
- Ramvall, Peter LU ; Wang, C.H. ; Astromskas, Gvidas ; Vellianitis, Georgios ; Holland, Martin ; Droopad, Ravi ; Samuelson, Lars LU ; Wernersson, Lars-Erik LU ; Paslack, Matthias and Diaz, C.H.
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- A1. Crystal structure, A3. Metalorganic chemical vapor deposition, A3. Organometallic vapor phase epitaxy, B1. Nanomaterials, B1. Antimonides, B3. Heterojunction semiconductor devices.
- in
- Journal of Crystal Growth
- volume
- 374
- pages
- 43 - 48
- publisher
- Elsevier
- external identifiers
-
- wos:000320585500008
- scopus:84877296139
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2013.03.044
- language
- English
- LU publication?
- yes
- id
- 0504f422-1b82-452f-bc76-e6faf5482320 (old id 3735420)
- alternative location
- http://www.sciencedirect.com/science/article/pii/S0022024813002339
- date added to LUP
- 2016-04-01 13:06:32
- date last changed
- 2023-09-16 19:18:40
@article{0504f422-1b82-452f-bc76-e6faf5482320, abstract = {{We demonstrate MOVPE-growth of InAs/AlAs0.16Sb0.84/GaSb and InAs/AlAs0.16Sb0.84/InAs heterostructures of excellent quality as observed by transmission electron microscopy and x-ray diffraction 2-theta-omega and rocking curve scans with full width at half maximum routinely below 100 arcsec. Key points regarding interface control for heteroepitaxial nucleation are reviewed and the choice of suitable precursors to minimize the incorporation of C and O are discussed.}}, author = {{Ramvall, Peter and Wang, C.H. and Astromskas, Gvidas and Vellianitis, Georgios and Holland, Martin and Droopad, Ravi and Samuelson, Lars and Wernersson, Lars-Erik and Paslack, Matthias and Diaz, C.H.}}, issn = {{0022-0248}}, keywords = {{A1. Crystal structure; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; B1. Nanomaterials; B1. Antimonides; B3. Heterojunction semiconductor devices.}}, language = {{eng}}, pages = {{43--48}}, publisher = {{Elsevier}}, series = {{Journal of Crystal Growth}}, title = {{MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures}}, url = {{https://lup.lub.lu.se/search/files/3164131/3735647.pdf}}, doi = {{10.1016/j.jcrysgro.2013.03.044}}, volume = {{374}}, year = {{2013}}, }