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Nanowire-based multiple quantum dot memory

Nilsson, Henrik LU ; Thelander, Claes LU ; Fröberg, Linus LU ; Wagner, Jakob LU and Samuelson, Lars LU (2006) In Applied Physics Letters 89(16).
Abstract
The authors propose and demonstrate an alternative memory concept in which a storage island is connected to a nanowire containing a stack of nine InAs quantum dots, each separated by thin InP tunnel barriers. Transport through the quantum dot structure is suppressed for a particular biasing window due to misalignment of the energy levels. This leads to hysteresis in the charging/discharging of the storage island. The memory operates for temperatures up to around 150 K and has write times down to at least 15 ns. A comparison is made to a nanowire memory based on a single, thick InP barrier.
Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
89
issue
16
article number
163101
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000241405200080
  • scopus:33750162264
ISSN
0003-6951
DOI
10.1063/1.2362594
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
a25fbfc2-b708-425a-8003-ad4b6f280381 (old id 387167)
date added to LUP
2016-04-01 12:38:04
date last changed
2021-05-05 01:27:05
@article{a25fbfc2-b708-425a-8003-ad4b6f280381,
  abstract     = {The authors propose and demonstrate an alternative memory concept in which a storage island is connected to a nanowire containing a stack of nine InAs quantum dots, each separated by thin InP tunnel barriers. Transport through the quantum dot structure is suppressed for a particular biasing window due to misalignment of the energy levels. This leads to hysteresis in the charging/discharging of the storage island. The memory operates for temperatures up to around 150 K and has write times down to at least 15 ns. A comparison is made to a nanowire memory based on a single, thick InP barrier.},
  author       = {Nilsson, Henrik and Thelander, Claes and Fröberg, Linus and Wagner, Jakob and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  number       = {16},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Letters},
  title        = {Nanowire-based multiple quantum dot memory},
  url          = {http://dx.doi.org/10.1063/1.2362594},
  doi          = {10.1063/1.2362594},
  volume       = {89},
  year         = {2006},
}