Charge Trapping and Defect Dynamics as Origin of Memory Effects in Metal Halide Perovskite Memlumors
(2024) In Journal of Physical Chemistry Letters 15(24). p.6256-6265- Abstract
Large language models for artificial intelligence applications require energy-efficient computing. Neuromorphic photonics has the potential to reach significantly lower energy consumption in comparison with classical electronics. A recently proposed memlumor device uses photoluminescence output that carries information about its excitation history via the excited state dynamics of the material. Solution-processed metal halide perovskites can be used as efficient memlumors. We show that trapping of photogenerated charge carriers modulated by photoinduced dynamics of the trapping states themselves explains the memory response of perovskite memlumors on time scales from nanoseconds to minutes. The memlumor concept shifts the paradigm of... (More)
Large language models for artificial intelligence applications require energy-efficient computing. Neuromorphic photonics has the potential to reach significantly lower energy consumption in comparison with classical electronics. A recently proposed memlumor device uses photoluminescence output that carries information about its excitation history via the excited state dynamics of the material. Solution-processed metal halide perovskites can be used as efficient memlumors. We show that trapping of photogenerated charge carriers modulated by photoinduced dynamics of the trapping states themselves explains the memory response of perovskite memlumors on time scales from nanoseconds to minutes. The memlumor concept shifts the paradigm of the detrimental role of charge traps and their dynamics in metal halide perovskite semiconductors by enabling new applications based on these trap states. The appropriate control of defect dynamics in perovskites allows these materials to enter the field of energy-efficient photonic neuromorphic computing, which we illustrate by proposing several possible realizations of such systems.
(Less)
- author
- organization
- publishing date
- 2024-06-20
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Physical Chemistry Letters
- volume
- 15
- issue
- 24
- pages
- 10 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85195587807
- pmid:38843474
- ISSN
- 1948-7185
- DOI
- 10.1021/acs.jpclett.4c00985
- language
- English
- LU publication?
- yes
- id
- 3a3a946c-8413-4c7c-b96a-83a0e41e5f11
- date added to LUP
- 2024-09-16 10:40:50
- date last changed
- 2024-09-17 03:00:13
@article{3a3a946c-8413-4c7c-b96a-83a0e41e5f11, abstract = {{<p>Large language models for artificial intelligence applications require energy-efficient computing. Neuromorphic photonics has the potential to reach significantly lower energy consumption in comparison with classical electronics. A recently proposed memlumor device uses photoluminescence output that carries information about its excitation history via the excited state dynamics of the material. Solution-processed metal halide perovskites can be used as efficient memlumors. We show that trapping of photogenerated charge carriers modulated by photoinduced dynamics of the trapping states themselves explains the memory response of perovskite memlumors on time scales from nanoseconds to minutes. The memlumor concept shifts the paradigm of the detrimental role of charge traps and their dynamics in metal halide perovskite semiconductors by enabling new applications based on these trap states. The appropriate control of defect dynamics in perovskites allows these materials to enter the field of energy-efficient photonic neuromorphic computing, which we illustrate by proposing several possible realizations of such systems.</p>}}, author = {{Marunchenko, Alexandr and Kumar, Jitendra and Kiligaridis, Alexander and Rao, Shraddha M. and Tatarinov, Dmitry and Matchenya, Ivan and Sapozhnikova, Elizaveta and Ji, Ran and Telschow, Oscar and Brunner, Julius and Yulin, Alexei and Pushkarev, Anatoly and Vaynzof, Yana and Scheblykin, Ivan G.}}, issn = {{1948-7185}}, language = {{eng}}, month = {{06}}, number = {{24}}, pages = {{6256--6265}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Journal of Physical Chemistry Letters}}, title = {{Charge Trapping and Defect Dynamics as Origin of Memory Effects in Metal Halide Perovskite Memlumors}}, url = {{http://dx.doi.org/10.1021/acs.jpclett.4c00985}}, doi = {{10.1021/acs.jpclett.4c00985}}, volume = {{15}}, year = {{2024}}, }