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Charge Trapping and Defect Dynamics as Origin of Memory Effects in Metal Halide Perovskite Memlumors

Marunchenko, Alexandr LU ; Kumar, Jitendra LU ; Kiligaridis, Alexander LU ; Rao, Shraddha M. LU ; Tatarinov, Dmitry ; Matchenya, Ivan ; Sapozhnikova, Elizaveta ; Ji, Ran ; Telschow, Oscar and Brunner, Julius , et al. (2024) In Journal of Physical Chemistry Letters 15(24). p.6256-6265
Abstract

Large language models for artificial intelligence applications require energy-efficient computing. Neuromorphic photonics has the potential to reach significantly lower energy consumption in comparison with classical electronics. A recently proposed memlumor device uses photoluminescence output that carries information about its excitation history via the excited state dynamics of the material. Solution-processed metal halide perovskites can be used as efficient memlumors. We show that trapping of photogenerated charge carriers modulated by photoinduced dynamics of the trapping states themselves explains the memory response of perovskite memlumors on time scales from nanoseconds to minutes. The memlumor concept shifts the paradigm of... (More)

Large language models for artificial intelligence applications require energy-efficient computing. Neuromorphic photonics has the potential to reach significantly lower energy consumption in comparison with classical electronics. A recently proposed memlumor device uses photoluminescence output that carries information about its excitation history via the excited state dynamics of the material. Solution-processed metal halide perovskites can be used as efficient memlumors. We show that trapping of photogenerated charge carriers modulated by photoinduced dynamics of the trapping states themselves explains the memory response of perovskite memlumors on time scales from nanoseconds to minutes. The memlumor concept shifts the paradigm of the detrimental role of charge traps and their dynamics in metal halide perovskite semiconductors by enabling new applications based on these trap states. The appropriate control of defect dynamics in perovskites allows these materials to enter the field of energy-efficient photonic neuromorphic computing, which we illustrate by proposing several possible realizations of such systems.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Physical Chemistry Letters
volume
15
issue
24
pages
10 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85195587807
  • pmid:38843474
ISSN
1948-7185
DOI
10.1021/acs.jpclett.4c00985
language
English
LU publication?
yes
id
3a3a946c-8413-4c7c-b96a-83a0e41e5f11
date added to LUP
2024-09-16 10:40:50
date last changed
2024-09-17 03:00:13
@article{3a3a946c-8413-4c7c-b96a-83a0e41e5f11,
  abstract     = {{<p>Large language models for artificial intelligence applications require energy-efficient computing. Neuromorphic photonics has the potential to reach significantly lower energy consumption in comparison with classical electronics. A recently proposed memlumor device uses photoluminescence output that carries information about its excitation history via the excited state dynamics of the material. Solution-processed metal halide perovskites can be used as efficient memlumors. We show that trapping of photogenerated charge carriers modulated by photoinduced dynamics of the trapping states themselves explains the memory response of perovskite memlumors on time scales from nanoseconds to minutes. The memlumor concept shifts the paradigm of the detrimental role of charge traps and their dynamics in metal halide perovskite semiconductors by enabling new applications based on these trap states. The appropriate control of defect dynamics in perovskites allows these materials to enter the field of energy-efficient photonic neuromorphic computing, which we illustrate by proposing several possible realizations of such systems.</p>}},
  author       = {{Marunchenko, Alexandr and Kumar, Jitendra and Kiligaridis, Alexander and Rao, Shraddha M. and Tatarinov, Dmitry and Matchenya, Ivan and Sapozhnikova, Elizaveta and Ji, Ran and Telschow, Oscar and Brunner, Julius and Yulin, Alexei and Pushkarev, Anatoly and Vaynzof, Yana and Scheblykin, Ivan G.}},
  issn         = {{1948-7185}},
  language     = {{eng}},
  month        = {{06}},
  number       = {{24}},
  pages        = {{6256--6265}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Journal of Physical Chemistry Letters}},
  title        = {{Charge Trapping and Defect Dynamics as Origin of Memory Effects in Metal Halide Perovskite Memlumors}},
  url          = {{http://dx.doi.org/10.1021/acs.jpclett.4c00985}},
  doi          = {{10.1021/acs.jpclett.4c00985}},
  volume       = {{15}},
  year         = {{2024}},
}