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Characterization of semiconductors by synchrotron-based techniques

Benter, Sandra LU and Mikkelsen, Anders LU (2024) 2. p.2-577
Abstract

Techniques based on intense photon beams from synchrotrons present unique opportunities for characterizing semiconductor materials, devices and processes. This is based on the unrivaled brightness in a broad wavelength range from infrared to hard X-rays. Synchrotron based methods can answer wide ranging questions in research and technology, and have seen an increase in use over many years as more and more powerful facilities have emerged. We will briefly introduce synchrotron radiation sources, give an overview of techniques relevant for semiconductor characterization and a range of examples to illustrate their use.

Please use this url to cite or link to this publication:
author
and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Band structure, Bulk information, Chemical composition, Crystal structure, Devices, Diffraction, Doping, Heterostructure, In-operando, In-situ, Luminescence, Microscopy, Nanostructure, Photoemission, Scattering, Spectroscopy, Strain, Surface, Synchrotron, X-ray
host publication
Comprehensive Semiconductor Science and Technology, Second Edition : Volumes 1-3 - Volumes 1-3
volume
2
pages
2 - 577
publisher
Elsevier
external identifiers
  • scopus:85217074935
ISBN
9780323958196
9780323960274
DOI
10.1016/B978-0-323-96027-4.00036-X
language
English
LU publication?
yes
additional info
Publisher Copyright: © 2025 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies.
id
3c7e77ce-1e6c-4951-90d1-30e0d50abd74
date added to LUP
2025-05-06 09:53:07
date last changed
2025-05-06 09:53:51
@inbook{3c7e77ce-1e6c-4951-90d1-30e0d50abd74,
  abstract     = {{<p>Techniques based on intense photon beams from synchrotrons present unique opportunities for characterizing semiconductor materials, devices and processes. This is based on the unrivaled brightness in a broad wavelength range from infrared to hard X-rays. Synchrotron based methods can answer wide ranging questions in research and technology, and have seen an increase in use over many years as more and more powerful facilities have emerged. We will briefly introduce synchrotron radiation sources, give an overview of techniques relevant for semiconductor characterization and a range of examples to illustrate their use.</p>}},
  author       = {{Benter, Sandra and Mikkelsen, Anders}},
  booktitle    = {{Comprehensive Semiconductor Science and Technology, Second Edition : Volumes 1-3}},
  isbn         = {{9780323958196}},
  keywords     = {{Band structure; Bulk information; Chemical composition; Crystal structure; Devices; Diffraction; Doping; Heterostructure; In-operando; In-situ; Luminescence; Microscopy; Nanostructure; Photoemission; Scattering; Spectroscopy; Strain; Surface; Synchrotron; X-ray}},
  language     = {{eng}},
  month        = {{01}},
  pages        = {{2--577}},
  publisher    = {{Elsevier}},
  title        = {{Characterization of semiconductors by synchrotron-based techniques}},
  url          = {{http://dx.doi.org/10.1016/B978-0-323-96027-4.00036-X}},
  doi          = {{10.1016/B978-0-323-96027-4.00036-X}},
  volume       = {{2}},
  year         = {{2024}},
}