Operando Surface Characterization of InP Nanowire p-n Junctions
(2020) In Nano Letters 20(2). p.887-895- Abstract
We present an in-depth analysis of the surface band alignment and local potential distribution of InP nanowires containing a p-n junction using scanning probe and photoelectron microscopy techniques. The depletion region is localized to a 15 nm thin surface region by scanning tunneling spectroscopy and an electronic shift of up to 0.5 eV between the n- A nd p-doped nanowire segments was observed and confirmed by Kelvin probe force microscopy. Scanning photoelectron microscopy then allowed us to measure the intrinsic chemical shift of the In 3d, In 4d, and P 2p core level spectra along the nanowire and the effect of operating the nanowire diode in forward and reverse bias on these shifts. Thanks to the high-resolution techniques... (More)
We present an in-depth analysis of the surface band alignment and local potential distribution of InP nanowires containing a p-n junction using scanning probe and photoelectron microscopy techniques. The depletion region is localized to a 15 nm thin surface region by scanning tunneling spectroscopy and an electronic shift of up to 0.5 eV between the n- A nd p-doped nanowire segments was observed and confirmed by Kelvin probe force microscopy. Scanning photoelectron microscopy then allowed us to measure the intrinsic chemical shift of the In 3d, In 4d, and P 2p core level spectra along the nanowire and the effect of operating the nanowire diode in forward and reverse bias on these shifts. Thanks to the high-resolution techniques utilized, we observe fluctuations in the potential and chemical energy of the surface along the nanowire in great detail, exposing the sensitive nature of nanodevices to small scale structural variations.
(Less)
- author
- organization
- publishing date
- 2020
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- InP nanowire, KPFM, pn-junction, SPEM, STM, surface potential
- in
- Nano Letters
- volume
- 20
- issue
- 2
- pages
- 9 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:31891513
- scopus:85078430908
- ISSN
- 1530-6984
- DOI
- 10.1021/acs.nanolett.9b03529
- language
- English
- LU publication?
- yes
- id
- 3f65ac84-5121-41f6-84c8-f21a6eae1fe0
- date added to LUP
- 2020-02-10 14:08:52
- date last changed
- 2024-09-18 18:05:23
@article{3f65ac84-5121-41f6-84c8-f21a6eae1fe0, abstract = {{<p>We present an in-depth analysis of the surface band alignment and local potential distribution of InP nanowires containing a p-n junction using scanning probe and photoelectron microscopy techniques. The depletion region is localized to a 15 nm thin surface region by scanning tunneling spectroscopy and an electronic shift of up to 0.5 eV between the n- A nd p-doped nanowire segments was observed and confirmed by Kelvin probe force microscopy. Scanning photoelectron microscopy then allowed us to measure the intrinsic chemical shift of the In 3d, In 4d, and P 2p core level spectra along the nanowire and the effect of operating the nanowire diode in forward and reverse bias on these shifts. Thanks to the high-resolution techniques utilized, we observe fluctuations in the potential and chemical energy of the surface along the nanowire in great detail, exposing the sensitive nature of nanodevices to small scale structural variations.</p>}}, author = {{McKibbin, Sarah R. and Colvin, Jovana and Troian, Andrea and Knutsson, Johan V. and Webb, James L. and Otnes, Gaute and Dirscherl, Kai and Sezen, Hikmet and Amati, Matteo and Gregoratti, Luca and Borgström, Magnus T. and Mikkelsen, Anders and Timm, Rainer}}, issn = {{1530-6984}}, keywords = {{InP nanowire; KPFM; pn-junction; SPEM; STM; surface potential}}, language = {{eng}}, number = {{2}}, pages = {{887--895}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Operando Surface Characterization of InP Nanowire p-n Junctions}}, url = {{http://dx.doi.org/10.1021/acs.nanolett.9b03529}}, doi = {{10.1021/acs.nanolett.9b03529}}, volume = {{20}}, year = {{2020}}, }