Advanced

Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors

Persson, Karl-Magnus LU ; Malm, B. G. and Wernersson, Lars-Erik LU (2013) In Applied Physics Letters 103(3).
Abstract
By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density. (C) 2013 AIP Publishing LLC.
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanowire, Noise, mobility fluctuations, number fluctutations, InAs, Transistor, MOSFET, FET, high-k, hf02, al203
in
Applied Physics Letters
volume
103
issue
3
article number
033508
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000322146300110
  • scopus:84881492355
ISSN
0003-6951
DOI
10.1063/1.4813850
project
EIT_WWW Wireless with Wires
language
English
LU publication?
yes
id
076ed1c9-e573-4779-a934-a6c4817ae792 (old id 4043073)
alternative location
http://ieeexplore.ieee.org/Xplore/defdeny.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D6560855%26userType%3Dinst&denyReason=-133&arnumber=6560855&productsMatched=null&userType=inst
date added to LUP
2016-04-01 11:07:24
date last changed
2020-09-09 01:53:59
@article{076ed1c9-e573-4779-a934-a6c4817ae792,
  abstract     = {By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density. (C) 2013 AIP Publishing LLC.},
  author       = {Persson, Karl-Magnus and Malm, B. G. and Wernersson, Lars-Erik},
  issn         = {0003-6951},
  language     = {eng},
  number       = {3},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Letters},
  title        = {Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors},
  url          = {https://lup.lub.lu.se/search/ws/files/2398051/4330777.pdf},
  doi          = {10.1063/1.4813850},
  volume       = {103},
  year         = {2013},
}