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Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

Persson, Olof LU ; Lind, Erik LU ; Lundgren, Edvin LU ; Rubio-Zuazo, J. ; Castro, G. R. ; Wernersson, Lars-Erik LU ; Mikkelsen, Anders LU and Timm, Rainer LU (2013) In AIP Advances 3(7).
Abstract
MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for improved transport properties. Here, we have studied the interface structure and chemical composition of realistic MOS gate stacks, consisting of a W or Pd metal film and a 6- or 12-nm-thick HfO2 layer deposited on InAs, with Hard X-ray Photoemission Spectroscopy. In and As signals from InAs buried more than 18 nm below the surface are clearly detected. The HfO2 layers are found to be homogeneous, and no influence of the top metal on the sharp InAs-HfO2 interface is observed. These results bridge the gap between conventional photoemission spectroscopy studies on various metal-free model samples with very thin dielectric layers and realistic... (More)
MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for improved transport properties. Here, we have studied the interface structure and chemical composition of realistic MOS gate stacks, consisting of a W or Pd metal film and a 6- or 12-nm-thick HfO2 layer deposited on InAs, with Hard X-ray Photoemission Spectroscopy. In and As signals from InAs buried more than 18 nm below the surface are clearly detected. The HfO2 layers are found to be homogeneous, and no influence of the top metal on the sharp InAs-HfO2 interface is observed. These results bridge the gap between conventional photoemission spectroscopy studies on various metal-free model samples with very thin dielectric layers and realistic MOS gate stacks. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. (Less)
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Contribution to journal
publication status
published
subject
in
AIP Advances
volume
3
issue
7
article number
072131
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000322527000031
  • scopus:84882407066
ISSN
2158-3226
DOI
10.1063/1.4817575
language
English
LU publication?
yes
id
236e95f5-a417-4f6c-8e64-f43799fb557e (old id 4043091)
date added to LUP
2016-04-01 14:10:06
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2020-01-12 15:07:04
@article{236e95f5-a417-4f6c-8e64-f43799fb557e,
  abstract     = {MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for improved transport properties. Here, we have studied the interface structure and chemical composition of realistic MOS gate stacks, consisting of a W or Pd metal film and a 6- or 12-nm-thick HfO2 layer deposited on InAs, with Hard X-ray Photoemission Spectroscopy. In and As signals from InAs buried more than 18 nm below the surface are clearly detected. The HfO2 layers are found to be homogeneous, and no influence of the top metal on the sharp InAs-HfO2 interface is observed. These results bridge the gap between conventional photoemission spectroscopy studies on various metal-free model samples with very thin dielectric layers and realistic MOS gate stacks. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.},
  author       = {Persson, Olof and Lind, Erik and Lundgren, Edvin and Rubio-Zuazo, J. and Castro, G. R. and Wernersson, Lars-Erik and Mikkelsen, Anders and Timm, Rainer},
  issn         = {2158-3226},
  language     = {eng},
  number       = {7},
  publisher    = {American Institute of Physics (AIP)},
  series       = {AIP Advances},
  title        = {Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy},
  url          = {http://dx.doi.org/10.1063/1.4817575},
  doi          = {10.1063/1.4817575},
  volume       = {3},
  year         = {2013},
}