Vertical wrap-gated nanowire transistors
(2006) In Nanotechnology 17(11). p.227-230- Abstract
- We present a process for fabricating a field-effect transistor based on vertically standing InAs nanowires and demonstrate initial device characteristics. The wires are grown by chemical beam epitaxy at lithographically defined locations. Wrap gates are formed around the base of the wires through a number of deposition and etch steps. The fabrication is based on standard III - V processing and includes no random elements or single nanowire manipulation.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/405905
- author
- Bryllert, Tomas LU ; Wernersson, Lars-Erik LU ; Lowgren, T and Samuelson, Lars LU
- organization
- publishing date
- 2006
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 17
- issue
- 11
- pages
- 227 - 230
- publisher
- IOP Publishing
- external identifiers
-
- wos:000238250300002
- scopus:33744550370
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/17/11/S01
- language
- English
- LU publication?
- yes
- id
- b3dab0fa-e31d-4d19-8e2b-ca4ccd672c6c (old id 405905)
- date added to LUP
- 2016-04-01 12:18:56
- date last changed
- 2022-04-05 20:44:08
@article{b3dab0fa-e31d-4d19-8e2b-ca4ccd672c6c, abstract = {{We present a process for fabricating a field-effect transistor based on vertically standing InAs nanowires and demonstrate initial device characteristics. The wires are grown by chemical beam epitaxy at lithographically defined locations. Wrap gates are formed around the base of the wires through a number of deposition and etch steps. The fabrication is based on standard III - V processing and includes no random elements or single nanowire manipulation.}}, author = {{Bryllert, Tomas and Wernersson, Lars-Erik and Lowgren, T and Samuelson, Lars}}, issn = {{0957-4484}}, language = {{eng}}, number = {{11}}, pages = {{227--230}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Vertical wrap-gated nanowire transistors}}, url = {{http://dx.doi.org/10.1088/0957-4484/17/11/S01}}, doi = {{10.1088/0957-4484/17/11/S01}}, volume = {{17}}, year = {{2006}}, }