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Vertical wrap-gated nanowire transistors

Bryllert, Tomas LU ; Wernersson, Lars-Erik LU ; Lowgren, T and Samuelson, Lars LU (2006) In Nanotechnology 17(11). p.227-230
Abstract
We present a process for fabricating a field-effect transistor based on vertically standing InAs nanowires and demonstrate initial device characteristics. The wires are grown by chemical beam epitaxy at lithographically defined locations. Wrap gates are formed around the base of the wires through a number of deposition and etch steps. The fabrication is based on standard III - V processing and includes no random elements or single nanowire manipulation.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
17
issue
11
pages
227 - 230
publisher
IOP Publishing
external identifiers
  • wos:000238250300002
  • scopus:33744550370
ISSN
0957-4484
DOI
10.1088/0957-4484/17/11/S01
language
English
LU publication?
yes
id
b3dab0fa-e31d-4d19-8e2b-ca4ccd672c6c (old id 405905)
date added to LUP
2016-04-01 12:18:56
date last changed
2021-09-15 04:01:18
@article{b3dab0fa-e31d-4d19-8e2b-ca4ccd672c6c,
  abstract     = {We present a process for fabricating a field-effect transistor based on vertically standing InAs nanowires and demonstrate initial device characteristics. The wires are grown by chemical beam epitaxy at lithographically defined locations. Wrap gates are formed around the base of the wires through a number of deposition and etch steps. The fabrication is based on standard III - V processing and includes no random elements or single nanowire manipulation.},
  author       = {Bryllert, Tomas and Wernersson, Lars-Erik and Lowgren, T and Samuelson, Lars},
  issn         = {0957-4484},
  language     = {eng},
  number       = {11},
  pages        = {227--230},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Vertical wrap-gated nanowire transistors},
  url          = {http://dx.doi.org/10.1088/0957-4484/17/11/S01},
  doi          = {10.1088/0957-4484/17/11/S01},
  volume       = {17},
  year         = {2006},
}