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Growth and characterization of defect free GaAs nanowires

Wacaser, Brent LU ; Deppert, Knut LU orcid ; Karlsson, Lisa LU ; Samuelson, Lars LU and Seifert, Werner LU (2006) In Journal of Crystal Growth 287(2). p.504-508
Abstract
Most III-V compound semiconductor nanowires seeded by metal particles grow preferentially in a (over bar 1 over bar 1 over bar 1)B direction (B wires) and most commonly with many stacking faults perpendicular to the growth direction. If growth proceeds in an alternate direction, defect-free growth has been observed. We present experimental results for the growth of GaAs nanowires in a previously uninvestigated growth direction, a < 111 > A direction (A wires). One novelty is that a {111} A growth plane, like a {over bar 1 over bar 1 over bar 1} B, is a close packed plane where the stacking sequence can be interrupted forming stacking faults, but unlike the B wires the A wires lack stacking faults. It is also observed that, when grown... (More)
Most III-V compound semiconductor nanowires seeded by metal particles grow preferentially in a (over bar 1 over bar 1 over bar 1)B direction (B wires) and most commonly with many stacking faults perpendicular to the growth direction. If growth proceeds in an alternate direction, defect-free growth has been observed. We present experimental results for the growth of GaAs nanowires in a previously uninvestigated growth direction, a < 111 > A direction (A wires). One novelty is that a {111} A growth plane, like a {over bar 1 over bar 1 over bar 1} B, is a close packed plane where the stacking sequence can be interrupted forming stacking faults, but unlike the B wires the A wires lack stacking faults. It is also observed that, when grown under equivalent conditions, the growth rate of the A wires is approximately twice that of the B wires. Additionally, B wires have a hexagonal cross section with three {11 over bar 2} and three {11 over bar 2} side facets. A wires, on the other hand, have only three major side facets which are of the {11 over bar 2} type, giving them a triangular cross section. (c) 2005 Elsevier B.V. All rights reserved. (Less)
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
semiconducting III-V materials, epitaxy, organometallic vapor phase, nanostructures, defects, interfaces
in
Journal of Crystal Growth
volume
287
issue
2
pages
504 - 508
publisher
Elsevier
external identifiers
  • wos:000235071600063
  • scopus:30344485981
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2005.11.075
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
87c4a234-92ec-4e84-9fcd-2c5e7a3104e4 (old id 418147)
date added to LUP
2016-04-01 16:44:30
date last changed
2021-02-17 08:13:55
@article{87c4a234-92ec-4e84-9fcd-2c5e7a3104e4,
  abstract     = {Most III-V compound semiconductor nanowires seeded by metal particles grow preferentially in a (over bar 1 over bar 1 over bar 1)B direction (B wires) and most commonly with many stacking faults perpendicular to the growth direction. If growth proceeds in an alternate direction, defect-free growth has been observed. We present experimental results for the growth of GaAs nanowires in a previously uninvestigated growth direction, a &lt; 111 &gt; A direction (A wires). One novelty is that a {111} A growth plane, like a {over bar 1 over bar 1 over bar 1} B, is a close packed plane where the stacking sequence can be interrupted forming stacking faults, but unlike the B wires the A wires lack stacking faults. It is also observed that, when grown under equivalent conditions, the growth rate of the A wires is approximately twice that of the B wires. Additionally, B wires have a hexagonal cross section with three {11 over bar 2} and three {11 over bar 2} side facets. A wires, on the other hand, have only three major side facets which are of the {11 over bar 2} type, giving them a triangular cross section. (c) 2005 Elsevier B.V. All rights reserved.},
  author       = {Wacaser, Brent and Deppert, Knut and Karlsson, Lisa and Samuelson, Lars and Seifert, Werner},
  issn         = {0022-0248},
  language     = {eng},
  number       = {2},
  pages        = {504--508},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Growth and characterization of defect free GaAs nanowires},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2005.11.075},
  doi          = {10.1016/j.jcrysgro.2005.11.075},
  volume       = {287},
  year         = {2006},
}