Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
Berg, Alexander LU ; Lehmann, Sebastian LU ; Vainorius, Neimantas LU ; Gustafsson, Anders LU
; Pistol, Mats-Erik
LU
; Wallenberg, Reine
LU
; Samuelson, Lars
LU
and Borgström, Magnus
LU
(2014)
In Journal of Crystal Growth
386.
p.47-51
- Abstract
- We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 degrees C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in... (More)
- We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 degrees C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in zinc blende GaP. (C) 2013 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4273003
- author
- Berg, Alexander
LU
; Lehmann, Sebastian
LU
; Vainorius, Neimantas
LU
; Gustafsson, Anders
LU
; Pistol, Mats-Erik
LU
; Wallenberg, Reine
LU
; Samuelson, Lars
LU
and Borgström, Magnus
LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanostructures, Growth from vapor, Metal organic vapor phase epitaxy, Nanomaterials
- in
- Journal of Crystal Growth
- volume
- 386
- pages
- 47 - 51
- publisher
- Elsevier
- external identifiers
-
- wos:000327556200009
- scopus:84886305697
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2013.09.043
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- b2e9e6a9-37b9-416c-b332-d7c4d7db0335 (old id 4273003)
- date added to LUP
- 2016-04-01 14:50:23
- date last changed
- 2023-09-03 20:03:58
@article{b2e9e6a9-37b9-416c-b332-d7c4d7db0335,
abstract = {{We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 degrees C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in zinc blende GaP. (C) 2013 Elsevier B.V. All rights reserved.}},
author = {{Berg, Alexander and Lehmann, Sebastian and Vainorius, Neimantas and Gustafsson, Anders and Pistol, Mats-Erik and Wallenberg, Reine and Samuelson, Lars and Borgström, Magnus}},
issn = {{0022-0248}},
keywords = {{Nanostructures; Growth from vapor; Metal organic vapor phase epitaxy; Nanomaterials}},
language = {{eng}},
pages = {{47--51}},
publisher = {{Elsevier}},
series = {{Journal of Crystal Growth}},
title = {{Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching}},
url = {{http://dx.doi.org/10.1016/j.jcrysgro.2013.09.043}},
doi = {{10.1016/j.jcrysgro.2013.09.043}},
volume = {{386}},
year = {{2014}},
}