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Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching

Berg, Alexander LU ; Lehmann, Sebastian LU ; Vainorius, Neimantas LU ; Gustafsson, Anders LU ; Pistol, Mats-Erik LU ; Wallenberg, Reine LU ; Samuelson, Lars LU and Borgström, Magnus LU (2014) In Journal of Crystal Growth 386. p.47-51
Abstract
We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 degrees C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in... (More)
We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 degrees C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in zinc blende GaP. (C) 2013 Elsevier B.V. All rights reserved. (Less)
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organization
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type
Contribution to journal
publication status
published
subject
keywords
Nanostructures, Growth from vapor, Metal organic vapor phase epitaxy, Nanomaterials
in
Journal of Crystal Growth
volume
386
pages
47 - 51
publisher
Elsevier
external identifiers
  • wos:000327556200009
  • scopus:84886305697
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2013.09.043
language
English
LU publication?
yes
id
b2e9e6a9-37b9-416c-b332-d7c4d7db0335 (old id 4273003)
date added to LUP
2014-01-31 14:07:02
date last changed
2017-11-12 03:48:23
@article{b2e9e6a9-37b9-416c-b332-d7c4d7db0335,
  abstract     = {We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 degrees C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in zinc blende GaP. (C) 2013 Elsevier B.V. All rights reserved.},
  author       = {Berg, Alexander and Lehmann, Sebastian and Vainorius, Neimantas and Gustafsson, Anders and Pistol, Mats-Erik and Wallenberg, Reine and Samuelson, Lars and Borgström, Magnus},
  issn         = {0022-0248},
  keyword      = {Nanostructures,Growth from vapor,Metal organic vapor phase epitaxy,Nanomaterials},
  language     = {eng},
  pages        = {47--51},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2013.09.043},
  volume       = {386},
  year         = {2014},
}