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IMPROVED SIZE HOMOGENEITY OF INP-ON-GAINP STRANSKI-KRASTANOW ISLANDS BY GROWTH ON A THIN GAP INTERFACE LAYER

Carlsson, N LU ; Georgsson, K ; Montelius, L LU ; Samuelson, L LU ; Seifert, W LU and Wallenberg, R LU (1995) In Journal of Crystal Growth 156(1-2). p.23-29
Abstract
Coherent InP nano-sized islands, embedded into GaInP, have been grown by metal-organic vapour phase epitaxy using the Stranski-Krastanow growth mode. Photoluminescence, atomic force microscopy and transmission electron microscopy studies show that the insertion of a thin ∼ 4 monolayer thick GaP layer affects the critical thickness of the subsequently deposited two-dimensional InP wetting layer, increasing it from ∼ 1.5 monolayers (without an inserted GaP layer) to ∼ 2.5 monolayers (with an inserted GaP layer). We demonstrate that the inserted GaP layer affects also the island formation. The bimodal size distribution of Stranski-Krastanow islands, typical for low InP coverages, can be overcome without island coalescence by deposition on top... (More)
Coherent InP nano-sized islands, embedded into GaInP, have been grown by metal-organic vapour phase epitaxy using the Stranski-Krastanow growth mode. Photoluminescence, atomic force microscopy and transmission electron microscopy studies show that the insertion of a thin ∼ 4 monolayer thick GaP layer affects the critical thickness of the subsequently deposited two-dimensional InP wetting layer, increasing it from ∼ 1.5 monolayers (without an inserted GaP layer) to ∼ 2.5 monolayers (with an inserted GaP layer). We demonstrate that the inserted GaP layer affects also the island formation. The bimodal size distribution of Stranski-Krastanow islands, typical for low InP coverages, can be overcome without island coalescence by deposition on top of the thin GaP layer, where a coverage of InP of about 3.5–4.5 monolayers results in the formation of almost only the larger, fully developed, pyramidal islands. Annealing experiments at growth temperature of 580°C show that these islands (base area ≈ 40 × 50 nm2, height ≈ 10–15 nm, surface density ≈ (1−2) × 109 cm−2) are rather stable in a time-scale over several minutes before they slowly undergo an Ostwald ripening process. (Less)
Abstract (Swedish)
Coherent InP nano-sized islands, embedded into GaInP, have been grown by metal-organic vapour phase epitaxy using the Stranski-Krastanow growth mode. Photoluminescence, atomic force microscopy and transmission electron microscopy studies show that the insertion of a thin similar to 4 monolayer thick GaP layer affects the critical thickness of the subsequently deposited two-dimensional InP wetting layer, increasing it from similar to 1.5 monolayers (without an inserted GaP layer) to similar to 2.5 monolayers (with an inserted GaP layer). We demonstrate that the inserted GaP layer affects also the island formation. The bimodal size distribution of Stranski-Krastanow islands, typical for low InP coverages, can be overcome without island... (More)
Coherent InP nano-sized islands, embedded into GaInP, have been grown by metal-organic vapour phase epitaxy using the Stranski-Krastanow growth mode. Photoluminescence, atomic force microscopy and transmission electron microscopy studies show that the insertion of a thin similar to 4 monolayer thick GaP layer affects the critical thickness of the subsequently deposited two-dimensional InP wetting layer, increasing it from similar to 1.5 monolayers (without an inserted GaP layer) to similar to 2.5 monolayers (with an inserted GaP layer). We demonstrate that the inserted GaP layer affects also the island formation. The bimodal size distribution of Stranski-Krastanow islands, typical for low InP coverages, can be overcome without island coalescence by deposition on top of the thin GaP layer, where a coverage of InP of about 3.5-4.5 monolayers results in the formation of almost only the larger, fully developed, pyramidal islands, Annealing experiments at growth temperature of 580 degrees C show that these islands (base area approximate to 40 x 50 nm(2), height approximate to 10-15 nm, surface density approximate to(1-2)x10(9) cm(-2)) are rather stable in a time-scale over several minutes before they slowly undergo an Ostwald ripening process. (Less)
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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Crystal Growth
volume
156
issue
1-2
pages
7 pages
publisher
Elsevier
external identifiers
  • scopus:0029408741
ISSN
0022-0248
DOI
10.1016/0022-0248(95)00235-9
language
English
LU publication?
yes
id
42b50876-7bb9-45ac-bbe9-15d0502fd260
date added to LUP
2023-10-31 15:46:04
date last changed
2024-01-12 10:11:10
@article{42b50876-7bb9-45ac-bbe9-15d0502fd260,
  abstract     = {{Coherent InP nano-sized islands, embedded into GaInP, have been grown by metal-organic vapour phase epitaxy using the Stranski-Krastanow growth mode. Photoluminescence, atomic force microscopy and transmission electron microscopy studies show that the insertion of a thin ∼ 4 monolayer thick GaP layer affects the critical thickness of the subsequently deposited two-dimensional InP wetting layer, increasing it from ∼ 1.5 monolayers (without an inserted GaP layer) to ∼ 2.5 monolayers (with an inserted GaP layer). We demonstrate that the inserted GaP layer affects also the island formation. The bimodal size distribution of Stranski-Krastanow islands, typical for low InP coverages, can be overcome without island coalescence by deposition on top of the thin GaP layer, where a coverage of InP of about 3.5–4.5 monolayers results in the formation of almost only the larger, fully developed, pyramidal islands. Annealing experiments at growth temperature of 580°C show that these islands (base area ≈ 40 × 50 nm2, height ≈ 10–15 nm, surface density ≈ (1−2) × 109 cm−2) are rather stable in a time-scale over several minutes before they slowly undergo an Ostwald ripening process.}},
  author       = {{Carlsson, N and Georgsson, K and Montelius, L and Samuelson, L and Seifert, W and Wallenberg, R}},
  issn         = {{0022-0248}},
  language     = {{eng}},
  month        = {{11}},
  number       = {{1-2}},
  pages        = {{23--29}},
  publisher    = {{Elsevier}},
  series       = {{Journal of Crystal Growth}},
  title        = {{IMPROVED SIZE HOMOGENEITY OF INP-ON-GAINP STRANSKI-KRASTANOW ISLANDS BY GROWTH ON A THIN GAP INTERFACE LAYER}},
  url          = {{http://dx.doi.org/10.1016/0022-0248(95)00235-9}},
  doi          = {{10.1016/0022-0248(95)00235-9}},
  volume       = {{156}},
  year         = {{1995}},
}