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Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning

Suyatin, Dmitry LU orcid ; Jain, Vishal LU ; Nebol’sin, Valery A ; Trägårdh, Johanna LU ; Messing, Maria LU ; Wagner, Jakob LU ; Persson, Olof LU ; Timm, Rainer LU orcid ; Mikkelsen, Anders LU and Maximov, Ivan LU orcid , et al. (2014) In Nature Communications 5.
Abstract
Nanoscale contacts between metals and semiconductors are critical for further downscaling of electronic and optoelectronic devices. However, realizing nanocontacts poses significant challenges since conventional approaches to achieve ohmic contacts through Schottky barrier suppression are often inadequate. Here we report the realization and characterization of low n-type Schottky barriers (~0.35 eV) formed at epitaxial contacts between Au-In alloy catalytic particles and GaAs-nanowires. In comparison to previous studies, our detailed characterization, employing selective electrical contacts defined by high-precision electron beam lithography, reveals the barrier to occur directly and solely at the abrupt interface between the catalyst and... (More)
Nanoscale contacts between metals and semiconductors are critical for further downscaling of electronic and optoelectronic devices. However, realizing nanocontacts poses significant challenges since conventional approaches to achieve ohmic contacts through Schottky barrier suppression are often inadequate. Here we report the realization and characterization of low n-type Schottky barriers (~0.35 eV) formed at epitaxial contacts between Au-In alloy catalytic particles and GaAs-nanowires. In comparison to previous studies, our detailed characterization, employing selective electrical contacts defined by high-precision electron beam lithography, reveals the barrier to occur directly and solely at the abrupt interface between the catalyst and nanowire. We attribute this lowest-to-date-reported Schottky barrier to a reduced density of pinning states (~1017 m−2) and the formation of an electric dipole layer at the epitaxial contacts. The insight into the physical mechanisms behind the observed low-energy Schottky barrier may guide future efforts to engineer abrupt nanoscale electrical contacts with tailored electrical properties. (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Schottky nanocontact, catalytic nanoparticle, nanoelectronic device, photodetector, electron beam lithography, high-precision alignment, scanning tunneling microscopy
in
Nature Communications
volume
5
article number
3221
publisher
Nature Publishing Group
external identifiers
  • pmid:24488034
  • wos:000332664900002
  • scopus:84893862090
  • pmid:24488034
ISSN
2041-1723
DOI
10.1038/ncomms4221
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Synchrotron Radiation Research (011013009), Polymer and Materials Chemistry (LTH) (011001041), NanoLund (011012012)
id
99a00e6e-7598-4ea2-aca9-f273eef6a480 (old id 4318092)
date added to LUP
2016-04-01 14:41:29
date last changed
2024-10-10 20:21:53
@article{99a00e6e-7598-4ea2-aca9-f273eef6a480,
  abstract     = {{Nanoscale contacts between metals and semiconductors are critical for further downscaling of electronic and optoelectronic devices. However, realizing nanocontacts poses significant challenges since conventional approaches to achieve ohmic contacts through Schottky barrier suppression are often inadequate. Here we report the realization and characterization of low n-type Schottky barriers (~0.35 eV) formed at epitaxial contacts between Au-In alloy catalytic particles and GaAs-nanowires. In comparison to previous studies, our detailed characterization, employing selective electrical contacts defined by high-precision electron beam lithography, reveals the barrier to occur directly and solely at the abrupt interface between the catalyst and nanowire. We attribute this lowest-to-date-reported Schottky barrier to a reduced density of pinning states (~1017 m−2) and the formation of an electric dipole layer at the epitaxial contacts. The insight into the physical mechanisms behind the observed low-energy Schottky barrier may guide future efforts to engineer abrupt nanoscale electrical contacts with tailored electrical properties.}},
  author       = {{Suyatin, Dmitry and Jain, Vishal and Nebol’sin, Valery A and Trägårdh, Johanna and Messing, Maria and Wagner, Jakob and Persson, Olof and Timm, Rainer and Mikkelsen, Anders and Maximov, Ivan and Samuelson, Lars and Pettersson, Håkan}},
  issn         = {{2041-1723}},
  keywords     = {{Schottky nanocontact; catalytic nanoparticle; nanoelectronic device; photodetector; electron beam lithography; high-precision alignment; scanning tunneling microscopy}},
  language     = {{eng}},
  publisher    = {{Nature Publishing Group}},
  series       = {{Nature Communications}},
  title        = {{Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning}},
  url          = {{http://dx.doi.org/10.1038/ncomms4221}},
  doi          = {{10.1038/ncomms4221}},
  volume       = {{5}},
  year         = {{2014}},
}