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Bismuth-containing c(4 x 4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations

Laukkanen, P.; Punkkinen, M. P. J.; Lang, J. J. K.; Sadowski, Janusz LU ; Kuzmin, M. and Kokko, K. (2014) In Journal of Electron Spectroscopy and Related Phenomena 193. p.34-38
Abstract
Bismuth (Bi) induced c(4 x 4) surface structure of the GaAs(1 0 0) substrate, i.e., the GaAs(1 0 0)c(4 x 4)-Bi surface has been studied with synchrotron-radiation photoelectron spectroscopy and ab initio calculations. The surface was prepared by combining molecular beam epitaxy and in situ electron diffraction methods, and then the sample was transferred to a photoemission chamber without breaking ultrahigh vacuum conditions. Calculations show that the c(4 x 4)13 type unit cells, which consist of Bi-Bi and Bi-As dimers, are energetically favored on the surface and that Bi atoms occupy only the topmost atomic sites bonding to the As layer below. The presence of the c(4 x 4)(3 structure is supported by the comparison of measured and... (More)
Bismuth (Bi) induced c(4 x 4) surface structure of the GaAs(1 0 0) substrate, i.e., the GaAs(1 0 0)c(4 x 4)-Bi surface has been studied with synchrotron-radiation photoelectron spectroscopy and ab initio calculations. The surface was prepared by combining molecular beam epitaxy and in situ electron diffraction methods, and then the sample was transferred to a photoemission chamber without breaking ultrahigh vacuum conditions. Calculations show that the c(4 x 4)13 type unit cells, which consist of Bi-Bi and Bi-As dimers, are energetically favored on the surface and that Bi atoms occupy only the topmost atomic sites bonding to the As layer below. The presence of the c(4 x 4)(3 structure is supported by the comparison of measured and calculated core-level shifts of the GaAs(1 00)c(4 x 4)-Bi surface. Simulated scanning-tunneling-microscopy (STM) images, based on the suggested models, are presented for the comparison with future STM measurements. (C) 2014 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Core-level shift, Synchrotron-radiation spectroscopy, Ab initio, Surface, reconstruction, Gallium arsenide, Bismuth
in
Journal of Electron Spectroscopy and Related Phenomena
volume
193
pages
34 - 38
publisher
Elsevier
external identifiers
  • wos:000337010200006
  • scopus:84895933287
ISSN
0368-2048
DOI
10.1016/j.elspec.2014.02.008
language
English
LU publication?
yes
id
a6d30678-4b90-4cdc-b776-7b553c78b487 (old id 4552285)
date added to LUP
2014-07-17 09:55:25
date last changed
2017-01-01 05:55:39
@article{a6d30678-4b90-4cdc-b776-7b553c78b487,
  abstract     = {Bismuth (Bi) induced c(4 x 4) surface structure of the GaAs(1 0 0) substrate, i.e., the GaAs(1 0 0)c(4 x 4)-Bi surface has been studied with synchrotron-radiation photoelectron spectroscopy and ab initio calculations. The surface was prepared by combining molecular beam epitaxy and in situ electron diffraction methods, and then the sample was transferred to a photoemission chamber without breaking ultrahigh vacuum conditions. Calculations show that the c(4 x 4)13 type unit cells, which consist of Bi-Bi and Bi-As dimers, are energetically favored on the surface and that Bi atoms occupy only the topmost atomic sites bonding to the As layer below. The presence of the c(4 x 4)(3 structure is supported by the comparison of measured and calculated core-level shifts of the GaAs(1 00)c(4 x 4)-Bi surface. Simulated scanning-tunneling-microscopy (STM) images, based on the suggested models, are presented for the comparison with future STM measurements. (C) 2014 Elsevier B.V. All rights reserved.},
  author       = {Laukkanen, P. and Punkkinen, M. P. J. and Lang, J. J. K. and Sadowski, Janusz and Kuzmin, M. and Kokko, K.},
  issn         = {0368-2048},
  keyword      = {Core-level shift,Synchrotron-radiation spectroscopy,Ab initio,Surface,reconstruction,Gallium arsenide,Bismuth},
  language     = {eng},
  pages        = {34--38},
  publisher    = {Elsevier},
  series       = {Journal of Electron Spectroscopy and Related Phenomena},
  title        = {Bismuth-containing c(4 x 4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations},
  url          = {http://dx.doi.org/10.1016/j.elspec.2014.02.008},
  volume       = {193},
  year         = {2014},
}