Bismuth-containing c(4 x 4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations
(2014) In Journal of Electron Spectroscopy and Related Phenomena 193. p.34-38- Abstract
- Bismuth (Bi) induced c(4 x 4) surface structure of the GaAs(1 0 0) substrate, i.e., the GaAs(1 0 0)c(4 x 4)-Bi surface has been studied with synchrotron-radiation photoelectron spectroscopy and ab initio calculations. The surface was prepared by combining molecular beam epitaxy and in situ electron diffraction methods, and then the sample was transferred to a photoemission chamber without breaking ultrahigh vacuum conditions. Calculations show that the c(4 x 4)13 type unit cells, which consist of Bi-Bi and Bi-As dimers, are energetically favored on the surface and that Bi atoms occupy only the topmost atomic sites bonding to the As layer below. The presence of the c(4 x 4)(3 structure is supported by the comparison of measured and... (More)
- Bismuth (Bi) induced c(4 x 4) surface structure of the GaAs(1 0 0) substrate, i.e., the GaAs(1 0 0)c(4 x 4)-Bi surface has been studied with synchrotron-radiation photoelectron spectroscopy and ab initio calculations. The surface was prepared by combining molecular beam epitaxy and in situ electron diffraction methods, and then the sample was transferred to a photoemission chamber without breaking ultrahigh vacuum conditions. Calculations show that the c(4 x 4)13 type unit cells, which consist of Bi-Bi and Bi-As dimers, are energetically favored on the surface and that Bi atoms occupy only the topmost atomic sites bonding to the As layer below. The presence of the c(4 x 4)(3 structure is supported by the comparison of measured and calculated core-level shifts of the GaAs(1 00)c(4 x 4)-Bi surface. Simulated scanning-tunneling-microscopy (STM) images, based on the suggested models, are presented for the comparison with future STM measurements. (C) 2014 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4552285
- author
- Laukkanen, P. ; Punkkinen, M. P. J. ; Lang, J. J. K. ; Sadowski, Janusz LU ; Kuzmin, M. and Kokko, K.
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Core-level shift, Synchrotron-radiation spectroscopy, Ab initio, Surface, reconstruction, Gallium arsenide, Bismuth
- in
- Journal of Electron Spectroscopy and Related Phenomena
- volume
- 193
- pages
- 34 - 38
- publisher
- Elsevier
- external identifiers
-
- wos:000337010200006
- scopus:84895933287
- ISSN
- 0368-2048
- DOI
- 10.1016/j.elspec.2014.02.008
- language
- English
- LU publication?
- yes
- id
- a6d30678-4b90-4cdc-b776-7b553c78b487 (old id 4552285)
- date added to LUP
- 2016-04-01 13:52:33
- date last changed
- 2022-01-27 21:32:50
@article{a6d30678-4b90-4cdc-b776-7b553c78b487,
abstract = {{Bismuth (Bi) induced c(4 x 4) surface structure of the GaAs(1 0 0) substrate, i.e., the GaAs(1 0 0)c(4 x 4)-Bi surface has been studied with synchrotron-radiation photoelectron spectroscopy and ab initio calculations. The surface was prepared by combining molecular beam epitaxy and in situ electron diffraction methods, and then the sample was transferred to a photoemission chamber without breaking ultrahigh vacuum conditions. Calculations show that the c(4 x 4)13 type unit cells, which consist of Bi-Bi and Bi-As dimers, are energetically favored on the surface and that Bi atoms occupy only the topmost atomic sites bonding to the As layer below. The presence of the c(4 x 4)(3 structure is supported by the comparison of measured and calculated core-level shifts of the GaAs(1 00)c(4 x 4)-Bi surface. Simulated scanning-tunneling-microscopy (STM) images, based on the suggested models, are presented for the comparison with future STM measurements. (C) 2014 Elsevier B.V. All rights reserved.}},
author = {{Laukkanen, P. and Punkkinen, M. P. J. and Lang, J. J. K. and Sadowski, Janusz and Kuzmin, M. and Kokko, K.}},
issn = {{0368-2048}},
keywords = {{Core-level shift; Synchrotron-radiation spectroscopy; Ab initio; Surface; reconstruction; Gallium arsenide; Bismuth}},
language = {{eng}},
pages = {{34--38}},
publisher = {{Elsevier}},
series = {{Journal of Electron Spectroscopy and Related Phenomena}},
title = {{Bismuth-containing c(4 x 4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations}},
url = {{http://dx.doi.org/10.1016/j.elspec.2014.02.008}},
doi = {{10.1016/j.elspec.2014.02.008}},
volume = {{193}},
year = {{2014}},
}