A 2.8-to-5.8 GHz harmonic VCO in a 28 nm UTBB FD-SOI CMOS process
(2015) IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015 p.195-198- Abstract
- A 2.8-to-5.8GHz VCO designed in a 28nm UTBB FD-SOI CMOS process adopts a reconfigurable active core to save power at the lower oscillation frequencies, and to enable a trade-off between power consumption and phase noise at all frequencies. The UTBB FD-SOI CMOS process is instrumental to achieve a tuning range in excess of one octave at low power consumption, while the use of an 8-shaped tank coil yields a VCO that is highly insensitive to external magnetic fields. The VCO operates from 0.9V and has a figure-of-merit of 186-189 dBc/Hz, depending on the oscillation frequency and the configuration of the oscillator core. The active area of the VCO is 380 μm × 700 μm.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/45ea9c80-f204-4de1-8fc0-aa785e184304
- author
- Fanori, Luca ; Mahmoud, Ahmed LU ; Mattsson, Thomas ; Caputa, Peter ; Rämö, Sami and Andreani, Piero LU
- organization
- publishing date
- 2015
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- UTBB FD-SOI, CMOS, reconfigurable core, VCO, one octave, class-B, low phase noise
- host publication
- 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
- pages
- 195 - 198
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015
- conference location
- Phoenix, Arizona, United States
- conference dates
- 2015-05-17 - 2015-05-19
- external identifiers
-
- scopus:84975726990
- ISBN
- 978-1-4799-7642-3
- DOI
- 10.1109/RFIC.2015.7337738
- language
- English
- LU publication?
- yes
- id
- 45ea9c80-f204-4de1-8fc0-aa785e184304
- date added to LUP
- 2016-05-31 11:19:05
- date last changed
- 2022-05-02 03:36:11
@inproceedings{45ea9c80-f204-4de1-8fc0-aa785e184304, abstract = {{A 2.8-to-5.8GHz VCO designed in a 28nm UTBB FD-SOI CMOS process adopts a reconfigurable active core to save power at the lower oscillation frequencies, and to enable a trade-off between power consumption and phase noise at all frequencies. The UTBB FD-SOI CMOS process is instrumental to achieve a tuning range in excess of one octave at low power consumption, while the use of an 8-shaped tank coil yields a VCO that is highly insensitive to external magnetic fields. The VCO operates from 0.9V and has a figure-of-merit of 186-189 dBc/Hz, depending on the oscillation frequency and the configuration of the oscillator core. The active area of the VCO is 380 μm × 700 μm.}}, author = {{Fanori, Luca and Mahmoud, Ahmed and Mattsson, Thomas and Caputa, Peter and Rämö, Sami and Andreani, Piero}}, booktitle = {{2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)}}, isbn = {{978-1-4799-7642-3}}, keywords = {{UTBB FD-SOI; CMOS; reconfigurable core; VCO; one octave; class-B; low phase noise}}, language = {{eng}}, pages = {{195--198}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{A 2.8-to-5.8 GHz harmonic VCO in a 28 nm UTBB FD-SOI CMOS process}}, url = {{http://dx.doi.org/10.1109/RFIC.2015.7337738}}, doi = {{10.1109/RFIC.2015.7337738}}, year = {{2015}}, }