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GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence

Bolinsson, Jessica LU ; Ek, Martin LU ; Trägårdh, Johanna LU ; Mergenthaler, Kilian LU ; Jacobsson, Daniel LU ; Pistol, Mats-Erik LU ; Samuelson, Lars LU and Gustafsson, Anders LU (2014) In Nano Reseach 7(4). p.473-490
Abstract
In this report we explore the structural and optical properties of GaAs/AlGaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodoluminescence (CL) in a scanning electron microscope (SEM). We perform a systematic investigation of how the nanowire growth-temperature affects the total photon emission, and variations in the emission energy and intensity along the length of the nanowires. The morphology and crystal structures of the nanowires were investigated using SEM and transmission electron microscopy (TEM). In order to correlate specific photon emission characteristics with variations in the nanowire crystal structure directly, TEM and... (More)
In this report we explore the structural and optical properties of GaAs/AlGaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodoluminescence (CL) in a scanning electron microscope (SEM). We perform a systematic investigation of how the nanowire growth-temperature affects the total photon emission, and variations in the emission energy and intensity along the length of the nanowires. The morphology and crystal structures of the nanowires were investigated using SEM and transmission electron microscopy (TEM). In order to correlate specific photon emission characteristics with variations in the nanowire crystal structure directly, TEM and spatially resolved CL measurements were performed on the same individual nanowires. We found that the main emission energy was located at around 1.48 eV, and that the emission intensity was greatly enhanced when increasing the GaAs nanowire core growth temperature. The data strongly suggests that this emission energy is related to rotational twins in the GaAs nanowire core. Our measurements also show that radial overgrowth by GaAs on the GaAs nanowire core can have a deteriorating effect on the optical quality of the nanowires. Finally, we conclude that an in situ pre-growth annealing step at a sufficiently high temperature significantly improves the optical quality of the nanowires. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
GaAs/AlGaAs core shell nanowires, metalorganic vapour phase epitaxy, (MOVPE), cathodoluminescence, twin defects, transmission electron, microscopy
in
Nano Reseach
volume
7
issue
4
pages
473 - 490
publisher
Springer
external identifiers
  • wos:000339891100004
  • scopus:84899897100
ISSN
1998-0124
DOI
10.1007/s12274-014-0414-2
language
English
LU publication?
yes
id
32f5c4c1-19d3-4a1d-a28e-5d15d9dcbe28 (old id 4668118)
date added to LUP
2014-09-25 13:55:34
date last changed
2017-01-01 03:11:59
@article{32f5c4c1-19d3-4a1d-a28e-5d15d9dcbe28,
  abstract     = {In this report we explore the structural and optical properties of GaAs/AlGaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodoluminescence (CL) in a scanning electron microscope (SEM). We perform a systematic investigation of how the nanowire growth-temperature affects the total photon emission, and variations in the emission energy and intensity along the length of the nanowires. The morphology and crystal structures of the nanowires were investigated using SEM and transmission electron microscopy (TEM). In order to correlate specific photon emission characteristics with variations in the nanowire crystal structure directly, TEM and spatially resolved CL measurements were performed on the same individual nanowires. We found that the main emission energy was located at around 1.48 eV, and that the emission intensity was greatly enhanced when increasing the GaAs nanowire core growth temperature. The data strongly suggests that this emission energy is related to rotational twins in the GaAs nanowire core. Our measurements also show that radial overgrowth by GaAs on the GaAs nanowire core can have a deteriorating effect on the optical quality of the nanowires. Finally, we conclude that an in situ pre-growth annealing step at a sufficiently high temperature significantly improves the optical quality of the nanowires.},
  author       = {Bolinsson, Jessica and Ek, Martin and Trägårdh, Johanna and Mergenthaler, Kilian and Jacobsson, Daniel and Pistol, Mats-Erik and Samuelson, Lars and Gustafsson, Anders},
  issn         = {1998-0124},
  keyword      = {GaAs/AlGaAs core shell nanowires,metalorganic vapour phase epitaxy,(MOVPE),cathodoluminescence,twin defects,transmission electron,microscopy},
  language     = {eng},
  number       = {4},
  pages        = {473--490},
  publisher    = {Springer},
  series       = {Nano Reseach},
  title        = {GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence},
  url          = {http://dx.doi.org/10.1007/s12274-014-0414-2},
  volume       = {7},
  year         = {2014},
}