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Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors

Memisevic, Elvedin LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2014) In Journal of Vacuum Science and Technology B 32(5).
Abstract
A method to fabricate inorganic vertical spacer layers with well-controlled thickness down to 40 nm using electron beam exposure is demonstrated. These spacers are suitable in vertical nanowire transistor configuration. As spacer material, the authors use hydrogen silsesquioxane (HSQ), a material with low permittivity and high durability. They show that the resulting HSQ thickness can be controlled by electron dose used and it also depend on the initial thickness of the HSQ layer. To achieve good reproducibility, the authors found it necessary to fully submerge the nanowires beneath the HSQ layer initially and that the thickness of HSQ before exposure needs to be determined. Finally, they introduce these steps in an existing transistor... (More)
A method to fabricate inorganic vertical spacer layers with well-controlled thickness down to 40 nm using electron beam exposure is demonstrated. These spacers are suitable in vertical nanowire transistor configuration. As spacer material, the authors use hydrogen silsesquioxane (HSQ), a material with low permittivity and high durability. They show that the resulting HSQ thickness can be controlled by electron dose used and it also depend on the initial thickness of the HSQ layer. To achieve good reproducibility, the authors found it necessary to fully submerge the nanowires beneath the HSQ layer initially and that the thickness of HSQ before exposure needs to be determined. Finally, they introduce these steps in an existing transistor process and demonstrate vertical nanowire transistors with high performance. (C) 2014 American Vacuum Society. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Vacuum Science and Technology B
volume
32
issue
5
publisher
American Institute of Physics
external identifiers
  • wos:000343003600013
  • scopus:84929587248
ISSN
1520-8567
DOI
10.1116/1.4895112
language
English
LU publication?
yes
id
c6de8934-af66-4be4-b2ca-893aa0272b6c (old id 4796156)
date added to LUP
2014-11-21 12:55:44
date last changed
2017-08-13 03:17:00
@article{c6de8934-af66-4be4-b2ca-893aa0272b6c,
  abstract     = {A method to fabricate inorganic vertical spacer layers with well-controlled thickness down to 40 nm using electron beam exposure is demonstrated. These spacers are suitable in vertical nanowire transistor configuration. As spacer material, the authors use hydrogen silsesquioxane (HSQ), a material with low permittivity and high durability. They show that the resulting HSQ thickness can be controlled by electron dose used and it also depend on the initial thickness of the HSQ layer. To achieve good reproducibility, the authors found it necessary to fully submerge the nanowires beneath the HSQ layer initially and that the thickness of HSQ before exposure needs to be determined. Finally, they introduce these steps in an existing transistor process and demonstrate vertical nanowire transistors with high performance. (C) 2014 American Vacuum Society.},
  articleno    = {051211},
  author       = {Memisevic, Elvedin and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {1520-8567},
  language     = {eng},
  number       = {5},
  publisher    = {American Institute of Physics},
  series       = {Journal of Vacuum Science and Technology B},
  title        = {Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors},
  url          = {http://dx.doi.org/10.1116/1.4895112},
  volume       = {32},
  year         = {2014},
}