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Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

Mo, Jiongjiong LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM) In 26th International Conference on Indium Phosphideand Related Materials (IPRM)
Abstract
Asymmetric In0.53Ga0.47As MOSFETs with different regrown contacts at source (In0.53Ga0.47As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain g(m)/g(d) has been obtained with reduced output conductance g(d) and improved break-down voltage V-bd. For L-g=100nm, a high oscillation frequency f(max)= 270GHz has been obtained using an InP drain.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
26th International Conference on Indium Phosphideand Related Materials (IPRM)
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
26th International Conference on Indium Phosphide and Related Materials (IPRM)
external identifiers
  • wos:000346124000040
  • scopus:84906761471
ISSN
1092-8669
language
English
LU publication?
yes
id
6cc647a1-6f04-4210-bc52-601c4b2a0b86 (old id 4962492)
date added to LUP
2015-01-28 16:45:00
date last changed
2017-01-01 06:27:09
@inproceedings{6cc647a1-6f04-4210-bc52-601c4b2a0b86,
  abstract     = {Asymmetric In0.53Ga0.47As MOSFETs with different regrown contacts at source (In0.53Ga0.47As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain g(m)/g(d) has been obtained with reduced output conductance g(d) and improved break-down voltage V-bd. For L-g=100nm, a high oscillation frequency f(max)= 270GHz has been obtained using an InP drain.},
  author       = {Mo, Jiongjiong and Lind, Erik and Wernersson, Lars-Erik},
  booktitle    = {26th International Conference on Indium Phosphideand Related Materials (IPRM)},
  issn         = {1092-8669},
  language     = {eng},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {Asymmetric InGaAs MOSFETs with InGaAs source and InP drain},
  year         = {2014},
}