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High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique

Zota, Cezar LU ; Wernersson, Lars-Erik LU and Lind, Erik LU (2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM) In 26th International Conference on Indium Phosphide and Related Materials (IPRM)
Abstract
We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g(m,max) = 2.05 mS/um at V-ds = 0.5 V, as well as record-high extrapolated f(t) = 300 GHz and f(max) = 342 GHz, on the non-planar III-V MOSFET platform.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
26th International Conference on Indium Phosphide and Related Materials (IPRM)
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
26th International Conference on Indium Phosphide and Related Materials (IPRM)
external identifiers
  • wos:000346124000054
  • scopus:84906751194
ISSN
1092-8669
DOI
10.1109/ICIPRM.2014.6880567
language
English
LU publication?
yes
id
c374da6e-db8f-400d-9f64-8d46068f6abe (old id 4962496)
date added to LUP
2015-01-26 14:18:30
date last changed
2017-01-01 05:46:09
@inproceedings{c374da6e-db8f-400d-9f64-8d46068f6abe,
  abstract     = {We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g(m,max) = 2.05 mS/um at V-ds = 0.5 V, as well as record-high extrapolated f(t) = 300 GHz and f(max) = 342 GHz, on the non-planar III-V MOSFET platform.},
  author       = {Zota, Cezar and Wernersson, Lars-Erik and Lind, Erik},
  booktitle    = {26th International Conference on Indium Phosphide and Related Materials (IPRM)},
  issn         = {1092-8669},
  language     = {eng},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique},
  url          = {http://dx.doi.org/10.1109/ICIPRM.2014.6880567},
  year         = {2014},
}