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High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique

Zota, Cezar LU ; Wernersson, Lars-Erik LU and Lind, Erik LU (2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)
Abstract
We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g(m,max) = 2.05 mS/um at V-ds = 0.5 V, as well as record-high extrapolated f(t) = 300 GHz and f(max) = 342 GHz, on the non-planar III-V MOSFET platform.
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
26th International Conference on Indium Phosphide and Related Materials (IPRM)
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
26th International Conference on Indium Phosphide and Related Materials (IPRM)
conference dates
2014-05-11 - 2014-05-15
external identifiers
  • wos:000346124000054
  • scopus:84906751194
ISSN
1092-8669
DOI
10.1109/ICIPRM.2014.6880567
language
English
LU publication?
yes
id
c374da6e-db8f-400d-9f64-8d46068f6abe (old id 4962496)
date added to LUP
2016-04-01 13:36:46
date last changed
2021-09-22 02:08:57
@inproceedings{c374da6e-db8f-400d-9f64-8d46068f6abe,
  abstract     = {We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g(m,max) = 2.05 mS/um at V-ds = 0.5 V, as well as record-high extrapolated f(t) = 300 GHz and f(max) = 342 GHz, on the non-planar III-V MOSFET platform.},
  author       = {Zota, Cezar and Wernersson, Lars-Erik and Lind, Erik},
  booktitle    = {26th International Conference on Indium Phosphide and Related Materials (IPRM)},
  issn         = {1092-8669},
  language     = {eng},
  publisher    = {IEEE - Institute of Electrical and Electronics Engineers Inc.},
  title        = {High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique},
  url          = {http://dx.doi.org/10.1109/ICIPRM.2014.6880567},
  doi          = {10.1109/ICIPRM.2014.6880567},
  year         = {2014},
}