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Atomic Scale Surface Structure and Morphology of InAs Nanowire Crystal Superlattices: The Effect of Epitaxial Overgrowth

Knutsson, Johan LU ; Lehmann, Sebastian LU ; Hjort, Martin LU ; Reinke, Petra LU ; Lundgren, Edvin LU ; Dick Thelander, Kimberly LU ; Timm, Rainer LU and Mikkelsen, Anders LU (2015) In ACS Applied Materials and Interfaces 7(10). p.5748-5755
Abstract
While shell growth engineering to the atomic scale is important for tailoring semiconductor nanowires with superior properties, a precise knowledge of-the surface structure and morphology at different stages of this type of overgrowth has been lacking. We present a systematic scanning tunneling microscopy (STM) study of homoepitaxial Shell growth of twinned superlattices in zinc blende InAs nanowires that transforms {11I}A/B-type facets to the nonpolar {110}type. STM imaging along the nanowires provides information on different stages of the shell growth revealing distinct differences in growth dynamics of the crystal facets and surface structures not found in the bulk. While growth of a new surface layer is initiated simultaneously (at... (More)
While shell growth engineering to the atomic scale is important for tailoring semiconductor nanowires with superior properties, a precise knowledge of-the surface structure and morphology at different stages of this type of overgrowth has been lacking. We present a systematic scanning tunneling microscopy (STM) study of homoepitaxial Shell growth of twinned superlattices in zinc blende InAs nanowires that transforms {11I}A/B-type facets to the nonpolar {110}type. STM imaging along the nanowires provides information on different stages of the shell growth revealing distinct differences in growth dynamics of the crystal facets and surface structures not found in the bulk. While growth of a new surface layer is initiated simultaneously (at the twin plane interface) on the {111}A and {111}B nanofacets, the step flow growth proceeds much faster on {111}A compared to {111}B leading to significant differences in roughness. Further, we observe that the atomic scale structures on the {111}B facet is different from its bulk counterpart and that shell growth on this facet occurs via steps perpendicular to the (112)B-type directions. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
STM, nanowire, surface, III-V, lnAs, homoepitaxy, shell-growth
in
ACS Applied Materials and Interfaces
volume
7
issue
10
pages
5748 - 5755
publisher
The American Chemical Society
external identifiers
  • wos:000351420300016
  • scopus:84925359441
ISSN
1944-8244
DOI
10.1021/am507931z
language
English
LU publication?
yes
id
c2a4537b-b0d5-439b-9f4d-a000b2b68976 (old id 5282050)
date added to LUP
2015-04-24 13:30:00
date last changed
2017-11-19 03:08:22
@article{c2a4537b-b0d5-439b-9f4d-a000b2b68976,
  abstract     = {While shell growth engineering to the atomic scale is important for tailoring semiconductor nanowires with superior properties, a precise knowledge of-the surface structure and morphology at different stages of this type of overgrowth has been lacking. We present a systematic scanning tunneling microscopy (STM) study of homoepitaxial Shell growth of twinned superlattices in zinc blende InAs nanowires that transforms {11I}A/B-type facets to the nonpolar {110}type. STM imaging along the nanowires provides information on different stages of the shell growth revealing distinct differences in growth dynamics of the crystal facets and surface structures not found in the bulk. While growth of a new surface layer is initiated simultaneously (at the twin plane interface) on the {111}A and {111}B nanofacets, the step flow growth proceeds much faster on {111}A compared to {111}B leading to significant differences in roughness. Further, we observe that the atomic scale structures on the {111}B facet is different from its bulk counterpart and that shell growth on this facet occurs via steps perpendicular to the (112)B-type directions.},
  author       = {Knutsson, Johan and Lehmann, Sebastian and Hjort, Martin and Reinke, Petra and Lundgren, Edvin and Dick Thelander, Kimberly and Timm, Rainer and Mikkelsen, Anders},
  issn         = {1944-8244},
  keyword      = {STM,nanowire,surface,III-V,lnAs,homoepitaxy,shell-growth},
  language     = {eng},
  number       = {10},
  pages        = {5748--5755},
  publisher    = {The American Chemical Society},
  series       = {ACS Applied Materials and Interfaces},
  title        = {Atomic Scale Surface Structure and Morphology of InAs Nanowire Crystal Superlattices: The Effect of Epitaxial Overgrowth},
  url          = {http://dx.doi.org/10.1021/am507931z},
  volume       = {7},
  year         = {2015},
}