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Intrinsic Performance of InAs Nanowire Capacitors

Jansson, Kristofer LU ; Lind, Erik LU orcid and Wernersson, Lars-Erik LU (2014) In IEEE Transactions on Electron Devices 61(2). p.452-459
Abstract
The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanowires (NWs), modeling, Capacitor, InAs
in
IEEE Transactions on Electron Devices
volume
61
issue
2
pages
452 - 459
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:84893762092
  • wos:000330620600030
ISSN
0018-9383
DOI
10.1109/TED.2013.2293456
project
EIT_WWW Wireless with Wires
language
English
LU publication?
yes
id
5659cee8-eaf3-4a31-a448-b0c10b880b55 (old id 7760982)
date added to LUP
2016-04-01 13:57:35
date last changed
2024-07-03 21:44:09
@article{5659cee8-eaf3-4a31-a448-b0c10b880b55,
  abstract     = {{The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.}},
  author       = {{Jansson, Kristofer and Lind, Erik and Wernersson, Lars-Erik}},
  issn         = {{0018-9383}},
  keywords     = {{nanowires (NWs); modeling; Capacitor; InAs}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{452--459}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{Intrinsic Performance of InAs Nanowire Capacitors}},
  url          = {{http://dx.doi.org/10.1109/TED.2013.2293456}},
  doi          = {{10.1109/TED.2013.2293456}},
  volume       = {{61}},
  year         = {{2014}},
}