On the thermal conductivity anisotropy in wurtzite GaN
(2023) In AIP Advances 13(9).- Abstract
GaN-based power devices operating at high currents and high voltages are critically affected by the dissipation of Joule heat generated in the active regions. Consequently, knowledge of GaN thermal conductivity is crucial for effective thermal management, needed to ensure optimal device performance and reliability. Here, we present a study on the thermal conductivity of bulk GaN in crystallographic directions parallel and perpendicular to the c-axis. Thermal conductivity measurements are performed using the transient thermoreflectance technique. The experimental results are compared with a theoretical calculation based on a solution of the Boltzmann transport equation within the relaxation time approximation and taking into account the... (More)
GaN-based power devices operating at high currents and high voltages are critically affected by the dissipation of Joule heat generated in the active regions. Consequently, knowledge of GaN thermal conductivity is crucial for effective thermal management, needed to ensure optimal device performance and reliability. Here, we present a study on the thermal conductivity of bulk GaN in crystallographic directions parallel and perpendicular to the c-axis. Thermal conductivity measurements are performed using the transient thermoreflectance technique. The experimental results are compared with a theoretical calculation based on a solution of the Boltzmann transport equation within the relaxation time approximation and taking into account the exact phonon dispersion. All factors that determine the thermal conductivity anisotropy are analyzed, and the experimentally observed small anisotropy factor is explained.
(Less)
- author
- Tran, Dat Q. ; Paskova, Tania ; Darakchieva, Vanya LU and Paskov, Plamen P.
- organization
- publishing date
- 2023-09-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- AIP Advances
- volume
- 13
- issue
- 9
- article number
- 095009
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85170823777
- ISSN
- 2158-3226
- DOI
- 10.1063/5.0167866
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 2023 Author(s).
- id
- 569e7a2c-919e-4db0-a960-30d4c84980e0
- date added to LUP
- 2024-01-12 10:35:38
- date last changed
- 2024-02-09 10:43:52
@article{569e7a2c-919e-4db0-a960-30d4c84980e0,
abstract = {{<p>GaN-based power devices operating at high currents and high voltages are critically affected by the dissipation of Joule heat generated in the active regions. Consequently, knowledge of GaN thermal conductivity is crucial for effective thermal management, needed to ensure optimal device performance and reliability. Here, we present a study on the thermal conductivity of bulk GaN in crystallographic directions parallel and perpendicular to the c-axis. Thermal conductivity measurements are performed using the transient thermoreflectance technique. The experimental results are compared with a theoretical calculation based on a solution of the Boltzmann transport equation within the relaxation time approximation and taking into account the exact phonon dispersion. All factors that determine the thermal conductivity anisotropy are analyzed, and the experimentally observed small anisotropy factor is explained.</p>}},
author = {{Tran, Dat Q. and Paskova, Tania and Darakchieva, Vanya and Paskov, Plamen P.}},
issn = {{2158-3226}},
language = {{eng}},
month = {{09}},
number = {{9}},
publisher = {{American Institute of Physics (AIP)}},
series = {{AIP Advances}},
title = {{On the thermal conductivity anisotropy in wurtzite GaN}},
url = {{http://dx.doi.org/10.1063/5.0167866}},
doi = {{10.1063/5.0167866}},
volume = {{13}},
year = {{2023}},
}