Epitaxial InP nanowire growth from Cu seed particles
Hillerich, Karla LU ; Messing, Maria LU ; Wallenberg, Reine LU ; Deppert, Knut LU
and Dick Thelander, Kimberly
LU
(2011)
15th international conference on metal organic vapor phase epitaxy, 2010
315(1).
p.134-137
- Abstract
- Cu-seeded epitaxial growth of vertically aligned InP nanowires is reported for the first time. The nanowires were grown at temperatures between 290 and 420 degrees C by metal-organic vapor phase epitaxy (MOVPE) from particles formed from Cu thin films. In the temperature range of 340-370 degrees C high yields of vertically aligned nanowires could be achieved. The nanowire crystal structure and the particle composition were investigated by TEM and XEDS. The nanowires showed a zinc blende structure and a post-growth particle composition of 64 at% Cu and 36 at% In. (C) 2010 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1872768
- author
- Hillerich, Karla
LU
; Messing, Maria
LU
; Wallenberg, Reine
LU
; Deppert, Knut
LU
and Dick Thelander, Kimberly
LU
- organization
- publishing date
- 2011
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Nanostructures, Nanowires, Low-pressure metal-organic vapor phase, epitaxy, Semiconducting III-V materials, Semiconducting indium phosphide
- host publication
- Journal of Crystal Growth
- volume
- 315
- issue
- 1
- pages
- 134 - 137
- publisher
- Elsevier
- conference name
- 15th international conference on metal organic vapor phase epitaxy, 2010
- conference location
- Lake Tahoe, United States
- conference dates
- 2010-05-23 - 2010-05-28
- external identifiers
-
- wos:000287558400030
- scopus:79551683157
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2010.08.016
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- 577b0e2c-eabf-4211-80e5-315eec8f06b3 (old id 1872768)
- date added to LUP
- 2016-04-01 13:54:21
- date last changed
- 2023-11-12 23:39:23
@inproceedings{577b0e2c-eabf-4211-80e5-315eec8f06b3,
abstract = {{Cu-seeded epitaxial growth of vertically aligned InP nanowires is reported for the first time. The nanowires were grown at temperatures between 290 and 420 degrees C by metal-organic vapor phase epitaxy (MOVPE) from particles formed from Cu thin films. In the temperature range of 340-370 degrees C high yields of vertically aligned nanowires could be achieved. The nanowire crystal structure and the particle composition were investigated by TEM and XEDS. The nanowires showed a zinc blende structure and a post-growth particle composition of 64 at% Cu and 36 at% In. (C) 2010 Elsevier B.V. All rights reserved.}},
author = {{Hillerich, Karla and Messing, Maria and Wallenberg, Reine and Deppert, Knut and Dick Thelander, Kimberly}},
booktitle = {{Journal of Crystal Growth}},
issn = {{0022-0248}},
keywords = {{Nanostructures; Nanowires; Low-pressure metal-organic vapor phase; epitaxy; Semiconducting III-V materials; Semiconducting indium phosphide}},
language = {{eng}},
number = {{1}},
pages = {{134--137}},
publisher = {{Elsevier}},
title = {{Epitaxial InP nanowire growth from Cu seed particles}},
url = {{http://dx.doi.org/10.1016/j.jcrysgro.2010.08.016}},
doi = {{10.1016/j.jcrysgro.2010.08.016}},
volume = {{315}},
year = {{2011}},
}