Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors
(2018) In Nano Letters 18(7). p.4431-4439- Abstract
- We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III–V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding... (More)
- We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III–V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding 103 at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically treated nanowire surfaces, a feature generally not possible with oxides produced by atomic layer deposition due to the surface “self-cleaning” effect. Our results highlight the potential for parylene as an alternative ultrathin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene’s well-established biocompatible properties. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/57e9aac6-6f92-4855-9646-69f408b273c8
- author
- Gluschke, J.G. ; Seidl, J. ; Lyttleton, Roman LU ; Carrad, D.J. ; Cochrane, J.W. ; Lehmann, Sebastian LU ; Samuelson, Lars LU and Micholich, A.P.
- organization
- publishing date
- 2018
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 18
- issue
- 7
- pages
- 4431 - 4439
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85048991238
- ISSN
- 1530-6984
- DOI
- 10.1021/acs.nanolett.8b01519
- language
- English
- LU publication?
- yes
- id
- 57e9aac6-6f92-4855-9646-69f408b273c8
- date added to LUP
- 2019-05-09 15:53:16
- date last changed
- 2023-10-07 03:34:27
@article{57e9aac6-6f92-4855-9646-69f408b273c8, abstract = {{We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III–V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding 103 at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically treated nanowire surfaces, a feature generally not possible with oxides produced by atomic layer deposition due to the surface “self-cleaning” effect. Our results highlight the potential for parylene as an alternative ultrathin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene’s well-established biocompatible properties.}}, author = {{Gluschke, J.G. and Seidl, J. and Lyttleton, Roman and Carrad, D.J. and Cochrane, J.W. and Lehmann, Sebastian and Samuelson, Lars and Micholich, A.P.}}, issn = {{1530-6984}}, language = {{eng}}, number = {{7}}, pages = {{4431--4439}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors}}, url = {{http://dx.doi.org/10.1021/acs.nanolett.8b01519}}, doi = {{10.1021/acs.nanolett.8b01519}}, volume = {{18}}, year = {{2018}}, }