Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
Wernersson, Lars-Erik LU ; Borgström, Magnus LU ; Gustafson, Boel LU ; Gustafsson, Anders LU
; Pietzonka, I
; Pistol, Mats-Erik
LU
; Sass, T
; Seifert, Werner
LU
and Samuelson, Lars
LU
(2002)
In Applied Physics Letters
80(10).
p.1841-1843
- Abstract
- We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/342649
- author
- Wernersson, Lars-Erik
LU
; Borgström, Magnus
LU
; Gustafson, Boel
LU
; Gustafsson, Anders
LU
; Pietzonka, I
; Pistol, Mats-Erik
LU
; Sass, T
; Seifert, Werner
LU
and Samuelson, Lars
LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 80
- issue
- 10
- pages
- 1841 - 1843
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000174181800054
- scopus:79956000886
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1459113
- language
- English
- LU publication?
- yes
- id
- 5bc6e8af-49e6-46da-8e48-1a370f027ebe (old id 342649)
- date added to LUP
- 2016-04-01 12:12:19
- date last changed
- 2023-09-01 23:13:21
@article{5bc6e8af-49e6-46da-8e48-1a370f027ebe,
abstract = {{We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.}},
author = {{Wernersson, Lars-Erik and Borgström, Magnus and Gustafson, Boel and Gustafsson, Anders and Pietzonka, I and Pistol, Mats-Erik and Sass, T and Seifert, Werner and Samuelson, Lars}},
issn = {{0003-6951}},
language = {{eng}},
number = {{10}},
pages = {{1841--1843}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes}},
url = {{http://dx.doi.org/10.1063/1.1459113}},
doi = {{10.1063/1.1459113}},
volume = {{80}},
year = {{2002}},
}