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In situ characterization of the deposition of anatase TiO2 on rutile TiO2(110)

Head, Ashley R. LU ; Johansson, Niclas LU ; Niu, Yuran LU ; Snezhkova, Olesia LU ; Chaudhary, Shilpi LU ; Schnadt, Joachim LU ; Bluhm, Hendrik; Chen, Chaoyu; Avila, José and Asensio, Maria Carmen (2018) In Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 36(2).
Abstract

Growing additional TiO2 thin films on TiO2 supstrates in ultrahigh vacuum (UHV)-compatible chambers have many applications for sample preparation, such as smoothing surface morphologies, templating, and covering impurities. However, there has been little study into how to control the morphology of TiO2 films deposited onto TiO2 supstrates, especially using atomic layer deposition (ALD) precursors. Here, the authors show the growth of a TiO2 film on a rutile TiO2(110) surface using titanium tetraisopropoxide (TTIP) and water as the precursors at pressures well below those used in common ALD reactors. X-ray absorption spectroscopy suggests that the relatively low sample... (More)

Growing additional TiO2 thin films on TiO2 supstrates in ultrahigh vacuum (UHV)-compatible chambers have many applications for sample preparation, such as smoothing surface morphologies, templating, and covering impurities. However, there has been little study into how to control the morphology of TiO2 films deposited onto TiO2 supstrates, especially using atomic layer deposition (ALD) precursors. Here, the authors show the growth of a TiO2 film on a rutile TiO2(110) surface using titanium tetraisopropoxide (TTIP) and water as the precursors at pressures well below those used in common ALD reactors. X-ray absorption spectroscopy suggests that the relatively low sample temperature (175 °C) results in an anatase film despite the rutile template of the supstrate. Using ambient pressure x-ray photoelectron spectroscopy, the adsorption of TTIP was found to be self-limiting, even at room temperature. No molecular water was found to adsorb on the surface. The deposited thickness suggests that an alternate chemical vapor deposition growth mechanism may be dominating the growth process. This study highlights the possibility that metal oxide film deposition from molecular precursors is an option for sample preparations in common UHV-compatible chambers.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
volume
36
issue
2
publisher
American Vacuum Society
external identifiers
  • scopus:85042703172
ISSN
0734-2101
DOI
10.1116/1.5005533
language
English
LU publication?
yes
id
5c7d513a-e072-4563-93a4-a8441ba7dc84
date added to LUP
2018-03-19 10:51:52
date last changed
2019-01-06 13:48:06
@article{5c7d513a-e072-4563-93a4-a8441ba7dc84,
  abstract     = {<p>Growing additional TiO<sub>2</sub> thin films on TiO<sub>2</sub> supstrates in ultrahigh vacuum (UHV)-compatible chambers have many applications for sample preparation, such as smoothing surface morphologies, templating, and covering impurities. However, there has been little study into how to control the morphology of TiO<sub>2</sub> films deposited onto TiO<sub>2</sub> supstrates, especially using atomic layer deposition (ALD) precursors. Here, the authors show the growth of a TiO<sub>2</sub> film on a rutile TiO<sub>2</sub>(110) surface using titanium tetraisopropoxide (TTIP) and water as the precursors at pressures well below those used in common ALD reactors. X-ray absorption spectroscopy suggests that the relatively low sample temperature (175 °C) results in an anatase film despite the rutile template of the supstrate. Using ambient pressure x-ray photoelectron spectroscopy, the adsorption of TTIP was found to be self-limiting, even at room temperature. No molecular water was found to adsorb on the surface. The deposited thickness suggests that an alternate chemical vapor deposition growth mechanism may be dominating the growth process. This study highlights the possibility that metal oxide film deposition from molecular precursors is an option for sample preparations in common UHV-compatible chambers.</p>},
  articleno    = {02D405},
  author       = {Head, Ashley R. and Johansson, Niclas and Niu, Yuran and Snezhkova, Olesia and Chaudhary, Shilpi and Schnadt, Joachim and Bluhm, Hendrik and Chen, Chaoyu and Avila, José and Asensio, Maria Carmen},
  issn         = {0734-2101},
  language     = {eng},
  month        = {03},
  number       = {2},
  publisher    = {American Vacuum Society},
  series       = {Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films},
  title        = {In situ characterization of the deposition of anatase TiO<sub>2</sub> on rutile TiO<sub>2</sub>(110)},
  url          = {http://dx.doi.org/10.1116/1.5005533},
  volume       = {36},
  year         = {2018},
}