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Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy

Wu, Jun LU ; Borg, Mattias LU ; Jacobsson, Daniel LU ; Dick Thelander, Kimberly LU and Wernersson, Lars-Erik LU (2013) In Journal of Crystal Growth 383. p.158-165
Abstract
InGaAs nanowires grown by Metalorganic Vapor Phase Epitaxy (MOVPE) are promising candidates in future device technologies. The control of the chemical composition of InGaAs nanowires is not trivial due to the In atom diffusion from the substrate, which causes significant variations in the chemical composition along the nanowire. In this work, we report on the growth of InGaAs nanowires on (111)B InAs substrates followed by the characterization using high-resolution x-ray diffraction (HRXRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) as well as scanning transmission electron microscopy (STEM) in combination with energy dispersive X-ray spectroscopy (EDS). By detailed analyses of the HRXRD... (More)
InGaAs nanowires grown by Metalorganic Vapor Phase Epitaxy (MOVPE) are promising candidates in future device technologies. The control of the chemical composition of InGaAs nanowires is not trivial due to the In atom diffusion from the substrate, which causes significant variations in the chemical composition along the nanowire. In this work, we report on the growth of InGaAs nanowires on (111)B InAs substrates followed by the characterization using high-resolution x-ray diffraction (HRXRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) as well as scanning transmission electron microscopy (STEM) in combination with energy dispersive X-ray spectroscopy (EDS). By detailed analyses of the HRXRD spectra and their variations with nanowires grown for different times, fundamental insight was gained into tapering formation and chemical composition gradient of the nanowires. The measurements show that acceptable uniformity of In and Ga concentrations along InGaAs nanowires can be achieved, and the maximum achievable nanowire length without tapering depends on the nanowire density. Finally, by carefully choosing the growth conditions, the morphology of the InGaAs nanowire can be further optimized. (C) 2 013 Elsevier B.V. All rights reserved (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Chemical concentration, Diffusion, HRXRD, MOVPE, InGaAs nanowires
in
Journal of Crystal Growth
volume
383
pages
158 - 165
publisher
Elsevier
external identifiers
  • wos:000326049000026
  • scopus:84884691618
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2013.07.038
language
English
LU publication?
yes
id
5f7fe4e1-e928-4659-b7c0-203e7a505eb6 (old id 4157931)
date added to LUP
2013-12-04 13:45:39
date last changed
2019-01-13 04:57:38
@article{5f7fe4e1-e928-4659-b7c0-203e7a505eb6,
  abstract     = {InGaAs nanowires grown by Metalorganic Vapor Phase Epitaxy (MOVPE) are promising candidates in future device technologies. The control of the chemical composition of InGaAs nanowires is not trivial due to the In atom diffusion from the substrate, which causes significant variations in the chemical composition along the nanowire. In this work, we report on the growth of InGaAs nanowires on (111)B InAs substrates followed by the characterization using high-resolution x-ray diffraction (HRXRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) as well as scanning transmission electron microscopy (STEM) in combination with energy dispersive X-ray spectroscopy (EDS). By detailed analyses of the HRXRD spectra and their variations with nanowires grown for different times, fundamental insight was gained into tapering formation and chemical composition gradient of the nanowires. The measurements show that acceptable uniformity of In and Ga concentrations along InGaAs nanowires can be achieved, and the maximum achievable nanowire length without tapering depends on the nanowire density. Finally, by carefully choosing the growth conditions, the morphology of the InGaAs nanowire can be further optimized. (C) 2 013 Elsevier B.V. All rights reserved},
  author       = {Wu, Jun and Borg, Mattias and Jacobsson, Daniel and Dick Thelander, Kimberly and Wernersson, Lars-Erik},
  issn         = {0022-0248},
  keyword      = {Chemical concentration,Diffusion,HRXRD,MOVPE,InGaAs nanowires},
  language     = {eng},
  pages        = {158--165},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2013.07.038},
  volume       = {383},
  year         = {2013},
}