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Heterostructures in one-dimensional nanowires

Björk, Mikael LU ; Ohlsson, Jonas LU ; Persson, Ann LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Abstract
Chemical beam epitaxy has been used to grow III/V nanowires seeded from size selected Au aerosol particles. Both chemically uniform InAs wires as well as InAs wires containing one or several heterostructure interfaces were grown. The interfaces were characterized in a transmission electron microscope revealing atomically sharp interfaces and also that, barriers as thin as only 2-3 monolayers and up to several hundred nanometer could be inserted into homogenous InAs wires. Further more, electrical measurements on both homogenous wires and wires containing heterostructures have been performed to investigate the functionality of nanowire based device elements
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
monolayers, InAs-Au, nanowire based device elements, electrical measurements, transmission electron microscopy, atomically sharp interfaces, heterostructure interfaces, chemically uniform InAs wires, size selected Au aerosol particles, chemical beam epitaxy, III/V nanowires growth, one dimensional nanowires heterostructures, barriers
in
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
language
English
LU publication?
yes
id
1f017665-d095-4c0f-b09d-0ac126abb779 (old id 611843)
date added to LUP
2007-11-27 09:56:45
date last changed
2016-04-16 10:11:26
@inproceedings{1f017665-d095-4c0f-b09d-0ac126abb779,
  abstract     = {Chemical beam epitaxy has been used to grow III/V nanowires seeded from size selected Au aerosol particles. Both chemically uniform InAs wires as well as InAs wires containing one or several heterostructure interfaces were grown. The interfaces were characterized in a transmission electron microscope revealing atomically sharp interfaces and also that, barriers as thin as only 2-3 monolayers and up to several hundred nanometer could be inserted into homogenous InAs wires. Further more, electrical measurements on both homogenous wires and wires containing heterostructures have been performed to investigate the functionality of nanowire based device elements},
  author       = {Björk, Mikael and Ohlsson, Jonas and Persson, Ann and Wallenberg, Reine and Samuelson, Lars},
  booktitle    = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  keyword      = {monolayers,InAs-Au,nanowire based device elements,electrical measurements,transmission electron microscopy,atomically sharp interfaces,heterostructure interfaces,chemically uniform InAs wires,size selected Au aerosol particles,chemical beam epitaxy,III/V nanowires growth,one dimensional nanowires heterostructures,barriers},
  language     = {eng},
  pages        = {2},
  publisher    = {Lund University},
  title        = {Heterostructures in one-dimensional nanowires},
  year         = {2002},
}