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Resonant tunneling permeable base transistor based pulsed oscillator

Lind, Erik LU ; Lindström, Peter LU ; Nauen, André LU and Wernersson, Lars-Erik LU (2004) Device Research Conference - Conference Digest, 62nd DRC In Device Research Conference - Conference Digest, DRC p.129-130
Abstract
A technology was developed to embed nm-sized metallic features in close vicinity to semiconductor heterostructures, which allows a direct integration of resonant tunneling diodes (RTD) inside the channel of permeable base transistor. A AlGaAs/InGaAs based RTD was grown by molecular beam epitaxy (MBE), with peak current density either 70 or 120 kA/cm<sup>2</sup>. A fundamental oscillation frequency of 800 MHz was detected, with higher harmonics up to 2.6 GHz, using a spectrum analyzer. It was found that the oscillations could be quenched by applying a large (-1.5V) negative gate bias. The results indicate that a three terminal resonant tunneling transistor can be used to obtain pulsed operation of a resonant tunneling based... (More)
A technology was developed to embed nm-sized metallic features in close vicinity to semiconductor heterostructures, which allows a direct integration of resonant tunneling diodes (RTD) inside the channel of permeable base transistor. A AlGaAs/InGaAs based RTD was grown by molecular beam epitaxy (MBE), with peak current density either 70 or 120 kA/cm<sup>2</sup>. A fundamental oscillation frequency of 800 MHz was detected, with higher harmonics up to 2.6 GHz, using a spectrum analyzer. It was found that the oscillations could be quenched by applying a large (-1.5V) negative gate bias. The results indicate that a three terminal resonant tunneling transistor can be used to obtain pulsed operation of a resonant tunneling based oscillator. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Peak-current density, Gate capacitance, Resonant tunneling diodes (RTD), Resonant tunneling permeable based transistor (RT0PBT)
in
Device Research Conference - Conference Digest, DRC
pages
129 - 130
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
Device Research Conference - Conference Digest, 62nd DRC
external identifiers
  • scopus:18044386163
ISSN
1548-3770
DOI
10.1109/DRC.2004.1367817
language
English
LU publication?
yes
id
6dc0af39-12aa-4746-bf72-000ba7084639 (old id 614165)
date added to LUP
2007-11-29 12:57:43
date last changed
2017-01-01 07:24:25
@inproceedings{6dc0af39-12aa-4746-bf72-000ba7084639,
  abstract     = {A technology was developed to embed nm-sized metallic features in close vicinity to semiconductor heterostructures, which allows a direct integration of resonant tunneling diodes (RTD) inside the channel of permeable base transistor. A AlGaAs/InGaAs based RTD was grown by molecular beam epitaxy (MBE), with peak current density either 70 or 120 kA/cm&lt;sup&gt;2&lt;/sup&gt;. A fundamental oscillation frequency of 800 MHz was detected, with higher harmonics up to 2.6 GHz, using a spectrum analyzer. It was found that the oscillations could be quenched by applying a large (-1.5V) negative gate bias. The results indicate that a three terminal resonant tunneling transistor can be used to obtain pulsed operation of a resonant tunneling based oscillator.},
  author       = {Lind, Erik and Lindström, Peter and Nauen, André and Wernersson, Lars-Erik},
  booktitle    = {Device Research Conference - Conference Digest, DRC},
  issn         = {1548-3770},
  keyword      = {Peak-current density,Gate capacitance,Resonant tunneling diodes (RTD),Resonant tunneling permeable based transistor (RT0PBT)},
  language     = {eng},
  pages        = {129--130},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {Resonant tunneling permeable base transistor based pulsed oscillator},
  url          = {http://dx.doi.org/10.1109/DRC.2004.1367817},
  year         = {2004},
}