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- 2014
-
Mark
In GaAs MOSFETs with InP Drain
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Design of Radial Nanowire Tunnel Field-Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications
(
- Contribution to journal › Published meeting abstract
- 2013
-
Mark
GaSb nanowire pFETs for III-V CMOS
2013) 71th Annual Device Research Conference (DRC) In IEEE Device Research Conference. Proceedings p.13-14(
- Contribution to journal › Published meeting abstract
- 2012
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2011
-
Mark
15 nm diameter InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Gated Tunnel Diode with a Reactive Bias Stabilizing Network for 60 GHz Impulse Radio Implementations
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
Resonant tunneling permeable base transistor based pulsed oscillator
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding