Resonant tunneling permeable base transistor based pulsed oscillator
(2004) Device Research Conference - Conference Digest, 62nd DRC p.129-130- Abstract
- A technology was developed to embed nm-sized metallic features in close vicinity to semiconductor heterostructures, which allows a direct integration of resonant tunneling diodes (RTD) inside the channel of permeable base transistor. A AlGaAs/InGaAs based RTD was grown by molecular beam epitaxy (MBE), with peak current density either 70 or 120 kA/cm<sup>2</sup>. A fundamental oscillation frequency of 800 MHz was detected, with higher harmonics up to 2.6 GHz, using a spectrum analyzer. It was found that the oscillations could be quenched by applying a large (-1.5V) negative gate bias. The results indicate that a three terminal resonant tunneling transistor can be used to obtain pulsed operation of a resonant tunneling based... (More)
- A technology was developed to embed nm-sized metallic features in close vicinity to semiconductor heterostructures, which allows a direct integration of resonant tunneling diodes (RTD) inside the channel of permeable base transistor. A AlGaAs/InGaAs based RTD was grown by molecular beam epitaxy (MBE), with peak current density either 70 or 120 kA/cm<sup>2</sup>. A fundamental oscillation frequency of 800 MHz was detected, with higher harmonics up to 2.6 GHz, using a spectrum analyzer. It was found that the oscillations could be quenched by applying a large (-1.5V) negative gate bias. The results indicate that a three terminal resonant tunneling transistor can be used to obtain pulsed operation of a resonant tunneling based oscillator. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/614165
- author
- Lind, Erik LU ; Lindström, Peter LU ; Nauen, André LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2004
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Peak-current density, Gate capacitance, Resonant tunneling diodes (RTD), Resonant tunneling permeable based transistor (RT0PBT)
- host publication
- Device Research Conference - Conference Digest, DRC
- pages
- 129 - 130
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- Device Research Conference - Conference Digest, 62nd DRC
- conference location
- Notre Dame, IN, United States
- conference dates
- 2004-06-21 - 2004-06-23
- external identifiers
-
- scopus:18044386163
- ISSN
- 1548-3770
- DOI
- 10.1109/DRC.2004.1367817
- language
- English
- LU publication?
- yes
- id
- 6dc0af39-12aa-4746-bf72-000ba7084639 (old id 614165)
- date added to LUP
- 2016-04-01 17:06:23
- date last changed
- 2024-01-11 20:45:03
@inproceedings{6dc0af39-12aa-4746-bf72-000ba7084639, abstract = {{A technology was developed to embed nm-sized metallic features in close vicinity to semiconductor heterostructures, which allows a direct integration of resonant tunneling diodes (RTD) inside the channel of permeable base transistor. A AlGaAs/InGaAs based RTD was grown by molecular beam epitaxy (MBE), with peak current density either 70 or 120 kA/cm<sup>2</sup>. A fundamental oscillation frequency of 800 MHz was detected, with higher harmonics up to 2.6 GHz, using a spectrum analyzer. It was found that the oscillations could be quenched by applying a large (-1.5V) negative gate bias. The results indicate that a three terminal resonant tunneling transistor can be used to obtain pulsed operation of a resonant tunneling based oscillator.}}, author = {{Lind, Erik and Lindström, Peter and Nauen, André and Wernersson, Lars-Erik}}, booktitle = {{Device Research Conference - Conference Digest, DRC}}, issn = {{1548-3770}}, keywords = {{Peak-current density; Gate capacitance; Resonant tunneling diodes (RTD); Resonant tunneling permeable based transistor (RT0PBT)}}, language = {{eng}}, pages = {{129--130}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Resonant tunneling permeable base transistor based pulsed oscillator}}, url = {{http://dx.doi.org/10.1109/DRC.2004.1367817}}, doi = {{10.1109/DRC.2004.1367817}}, year = {{2004}}, }