15 nm diameter InAs nanowire MOSFETs
Dey, Anil LU ; Thelander, Claes LU ; Borgström, Magnus LU ; Borg, Mattias LU
; Lind, Erik
LU
and Wernersson, Lars-Erik
LU
(2011)
Device Research Conference (DRC), 2011 69th Annual
p.21-22
- Abstract
- InAs is an attractive channel material for III–V nanowire MOSFETs and early prototype high performance nanowire transistors have been demonstrated1. As the gate length is reduced, the nanowire diameter must be scaled quite aggressively in order to suppress short-channel effects2. However, a reduction in transconductance (gm) and drive current (ION) could be expected due to increased surface scattering for thin wires. We present data for the device properties of thin InAs nanowires, with diameters in the 15 nm range, and investigate possible improvements of the performance focusing on transistor applications. In order to boost ION, the source and drain resistance need to be reduced. Several doping sources were therefore evaluated in the... (More)
- InAs is an attractive channel material for III–V nanowire MOSFETs and early prototype high performance nanowire transistors have been demonstrated1. As the gate length is reduced, the nanowire diameter must be scaled quite aggressively in order to suppress short-channel effects2. However, a reduction in transconductance (gm) and drive current (ION) could be expected due to increased surface scattering for thin wires. We present data for the device properties of thin InAs nanowires, with diameters in the 15 nm range, and investigate possible improvements of the performance focusing on transistor applications. In order to boost ION, the source and drain resistance need to be reduced. Several doping sources were therefore evaluated in the study, among them selenium (Se), tin (Sn) and sulphur (S) to form n-i-n structures. We report very high current densities, up to 33 MA/cm2, comparable to modern HEMTs3, and a normalized transconductance of 1.8 S/mm for a nanowire with an intrinsic segment of nominally 150 nm and a diameter of 15 nm. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2158616
- author
- Dey, Anil
LU
; Thelander, Claes
LU
; Borgström, Magnus
LU
; Borg, Mattias
LU
; Lind, Erik
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2011
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- [Host publication title missing]
- pages
- 2 pages
- conference name
- Device Research Conference (DRC), 2011 69th Annual
- conference location
- Santa Barbara, CA, United States
- conference dates
- 2011-06-20
- external identifiers
-
- scopus:84880753856
- ISSN
- 1548-3770
- DOI
- 10.1109/DRC.2011.5994403
- language
- English
- LU publication?
- yes
- id
- b69383c1-cc9f-4f6a-9abe-78bbff668cf4 (old id 2158616)
- date added to LUP
- 2016-04-04 09:18:18
- date last changed
- 2023-09-19 21:55:05
@inproceedings{b69383c1-cc9f-4f6a-9abe-78bbff668cf4,
abstract = {{InAs is an attractive channel material for III–V nanowire MOSFETs and early prototype high performance nanowire transistors have been demonstrated1. As the gate length is reduced, the nanowire diameter must be scaled quite aggressively in order to suppress short-channel effects2. However, a reduction in transconductance (gm) and drive current (ION) could be expected due to increased surface scattering for thin wires. We present data for the device properties of thin InAs nanowires, with diameters in the 15 nm range, and investigate possible improvements of the performance focusing on transistor applications. In order to boost ION, the source and drain resistance need to be reduced. Several doping sources were therefore evaluated in the study, among them selenium (Se), tin (Sn) and sulphur (S) to form n-i-n structures. We report very high current densities, up to 33 MA/cm2, comparable to modern HEMTs3, and a normalized transconductance of 1.8 S/mm for a nanowire with an intrinsic segment of nominally 150 nm and a diameter of 15 nm.}},
author = {{Dey, Anil and Thelander, Claes and Borgström, Magnus and Borg, Mattias and Lind, Erik and Wernersson, Lars-Erik}},
booktitle = {{[Host publication title missing]}},
issn = {{1548-3770}},
language = {{eng}},
pages = {{21--22}},
title = {{15 nm diameter InAs nanowire MOSFETs}},
url = {{http://dx.doi.org/10.1109/DRC.2011.5994403}},
doi = {{10.1109/DRC.2011.5994403}},
year = {{2011}},
}