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In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V

Zota, Cezar LU ; Wernersson, Lars-Erik LU and Lind, Erik LU (2014) 72nd Annual Device Research Conference (DRC) p.209-210
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2014 72nd Annual Device Research Conference (DRC)
pages
209 - 210
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
72nd Annual Device Research Conference (DRC)
conference dates
2014-06-22 - 2014-06-25
external identifiers
  • wos:000346309800096
ISSN
1548-3770
language
English
LU publication?
yes
id
639b99f8-dec5-4382-bc54-7a946d81b22a (old id 4950610)
date added to LUP
2016-04-01 13:31:43
date last changed
2018-11-21 23:52:36
@inproceedings{639b99f8-dec5-4382-bc54-7a946d81b22a,
  author       = {{Zota, Cezar and Wernersson, Lars-Erik and Lind, Erik}},
  booktitle    = {{2014 72nd Annual Device Research Conference (DRC)}},
  issn         = {{1548-3770}},
  language     = {{eng}},
  pages        = {{209--210}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V}},
  year         = {{2014}},
}