High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(2012) 70th Annual Device Research Conference (DRC) p.205-206- Abstract
- Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest
due to their potential for low power operation at room temperature. The devices are based on inter-band
tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse
the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band
tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density
(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb
heterostructure nanowires to operate as TFETs. We... (More) - Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest
due to their potential for low power operation at room temperature. The devices are based on inter-band
tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse
the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band
tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density
(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb
heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb
nanowire TFETs, which exhibit record-high on-current levels. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3127465
- author
- Dey, Anil LU ; Borg, Mattias LU ; Ganjipour, Bahram LU ; Ek, Martin LU ; Dick Thelander, Kimberly LU ; Lind, Erik LU ; Nilsson, Peter LU ; Thelander, Claes LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2012
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Tunneling Field-Effect Transistors, Broken gap, InAs, GaSb
- host publication
- Device research conference
- pages
- 205 - 206
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 70th Annual Device Research Conference (DRC)
- conference dates
- 2012-06-18
- external identifiers
-
- scopus:84866914447
- ISSN
- 1548-3770
- DOI
- 10.1109/DRC.2012.6257038
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 9742efbb-f9c0-4784-b3e8-1a90d4d8cf75 (old id 3127465)
- date added to LUP
- 2016-04-01 13:20:58
- date last changed
- 2024-06-19 11:55:42
@inproceedings{9742efbb-f9c0-4784-b3e8-1a90d4d8cf75, abstract = {{Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest <br/><br> due to their potential for low power operation at room temperature. The devices are based on inter-band <br/><br> tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse <br/><br> the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band <br/><br> tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density <br/><br> (Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb <br/><br> heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb <br/><br> nanowire TFETs, which exhibit record-high on-current levels.}}, author = {{Dey, Anil and Borg, Mattias and Ganjipour, Bahram and Ek, Martin and Dick Thelander, Kimberly and Lind, Erik and Nilsson, Peter and Thelander, Claes and Wernersson, Lars-Erik}}, booktitle = {{Device research conference}}, issn = {{1548-3770}}, keywords = {{Tunneling Field-Effect Transistors; Broken gap; InAs; GaSb}}, language = {{eng}}, pages = {{205--206}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{High Current Density InAsSb/GaSb Tunnel Field Effect Transistors}}, url = {{https://lup.lub.lu.se/search/files/3313739/3128556.pdf}}, doi = {{10.1109/DRC.2012.6257038}}, year = {{2012}}, }