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Random telegraph noise in the photon emission from semiconductor quantum dots

Pistol, Mats-Erik LU ; Panev, Nikolay LU ; Castrillo, P; Hessman, Dan LU ; Samuelson, Lars LU ; Seifert, Werner LU ; Evtikhiev, V; Katznelson, A and Kotelnikov, E (2005) 2005 European Quantum Electronics Conference In 2005 European Quantum Electronics Conference p.18-18
Abstract
This study has observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs and InP quantum dots in GaInP. The dots are grown by the Stranski-Krastanow technique with a sufficiently low surface density that individual dots easily could be investigated. The luminescence from many single quantum dots, exhibiting switching between two levels, has been spectrally resolved as a function of time. The random telegraph noise is only observed in the presence of band filling. Results show no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks that changes. The InAs quantum dots behave very similarly to InP/GaInP and InGaAs/GaAs quantum dots with... (More)
This study has observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs and InP quantum dots in GaInP. The dots are grown by the Stranski-Krastanow technique with a sufficiently low surface density that individual dots easily could be investigated. The luminescence from many single quantum dots, exhibiting switching between two levels, has been spectrally resolved as a function of time. The random telegraph noise is only observed in the presence of band filling. Results show no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks that changes. The InAs quantum dots behave very similarly to InP/GaInP and InGaAs/GaAs quantum dots with respect to random telegraph noise. The similarities between the different systems argue for a common mechanism behind the blinking. Experiments are performed where the switching behaviour is changed in all the different systems supporting the idea that non-radiative defects are responsible (Less)
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
switching behaviour, nonradiative defects, InAs-GaAs-InP-GaInP, band filling, surface density, Stranski-Krastanow technique, quantum dots, photoluminescence, semiconductor quantum dots, random telegraph noise, photon emission
in
2005 European Quantum Electronics Conference
pages
18 - 18
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
2005 European Quantum Electronics Conference
external identifiers
  • scopus:33847303058
ISBN
0-7803-8973-5
DOI
10.1109/EQEC.2005.1567191
language
English
LU publication?
yes
id
132a30f4-2d89-4ae6-8441-53c6ac1ebd8c (old id 616496)
date added to LUP
2007-11-25 15:57:52
date last changed
2017-01-01 08:03:38
@inproceedings{132a30f4-2d89-4ae6-8441-53c6ac1ebd8c,
  abstract     = {This study has observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs and InP quantum dots in GaInP. The dots are grown by the Stranski-Krastanow technique with a sufficiently low surface density that individual dots easily could be investigated. The luminescence from many single quantum dots, exhibiting switching between two levels, has been spectrally resolved as a function of time. The random telegraph noise is only observed in the presence of band filling. Results show no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks that changes. The InAs quantum dots behave very similarly to InP/GaInP and InGaAs/GaAs quantum dots with respect to random telegraph noise. The similarities between the different systems argue for a common mechanism behind the blinking. Experiments are performed where the switching behaviour is changed in all the different systems supporting the idea that non-radiative defects are responsible},
  author       = {Pistol, Mats-Erik and Panev, Nikolay and Castrillo, P and Hessman, Dan and Samuelson, Lars and Seifert, Werner and Evtikhiev, V and Katznelson, A and Kotelnikov, E},
  booktitle    = {2005 European Quantum Electronics Conference},
  isbn         = {0-7803-8973-5},
  keyword      = {switching behaviour,nonradiative defects,InAs-GaAs-InP-GaInP,band filling,surface density,Stranski-Krastanow technique,quantum dots,photoluminescence,semiconductor quantum dots,random telegraph noise,photon emission},
  language     = {eng},
  pages        = {18--18},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {Random telegraph noise in the photon emission from semiconductor quantum dots},
  url          = {http://dx.doi.org/10.1109/EQEC.2005.1567191},
  year         = {2005},
}