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InAsP/InAs nanowire heterostructure field effect transistors

Lind, Erik LU and Wernersson, Lars-Erik LU (2006) Device Research Conference, 2006 In Device Research Conference p.173-174
Abstract
We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
nanowire heterostructure field effect transistors, InAsP-InAs
in
Device Research Conference
pages
173 - 174
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
Device Research Conference, 2006
ISBN
0-7803-9748-7
DOI
10.1109/DRC.2006.305171
language
English
LU publication?
yes
id
480f5cb9-89d7-4f0c-ad5c-7a243649d047 (old id 616699)
date added to LUP
2007-11-24 11:32:58
date last changed
2016-04-16 09:46:03
@inproceedings{480f5cb9-89d7-4f0c-ad5c-7a243649d047,
  abstract     = {We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage},
  author       = {Lind, Erik and Wernersson, Lars-Erik},
  booktitle    = {Device Research Conference},
  isbn         = {0-7803-9748-7},
  keyword      = {nanowire heterostructure field effect transistors,InAsP-InAs},
  language     = {eng},
  pages        = {173--174},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {InAsP/InAs nanowire heterostructure field effect transistors},
  url          = {http://dx.doi.org/10.1109/DRC.2006.305171},
  year         = {2006},
}