InAsP/InAs nanowire heterostructure field effect transistors
(2006) Device Research Conference, 2006 p.173-174- Abstract
- We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/616699
- author
- Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2006
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- nanowire heterostructure field effect transistors, InAsP-InAs
- host publication
- Device Research Conference
- pages
- 173 - 174
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- Device Research Conference, 2006
- conference location
- University Park, PA, United States
- conference dates
- 2006-06-26 - 2006-06-28
- ISBN
- 0-7803-9748-7
- DOI
- 10.1109/DRC.2006.305171
- language
- English
- LU publication?
- yes
- id
- 480f5cb9-89d7-4f0c-ad5c-7a243649d047 (old id 616699)
- date added to LUP
- 2016-04-04 11:49:59
- date last changed
- 2018-11-21 21:07:30
@inproceedings{480f5cb9-89d7-4f0c-ad5c-7a243649d047, abstract = {{We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage}}, author = {{Lind, Erik and Wernersson, Lars-Erik}}, booktitle = {{Device Research Conference}}, isbn = {{0-7803-9748-7}}, keywords = {{nanowire heterostructure field effect transistors; InAsP-InAs}}, language = {{eng}}, pages = {{173--174}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{InAsP/InAs nanowire heterostructure field effect transistors}}, url = {{http://dx.doi.org/10.1109/DRC.2006.305171}}, doi = {{10.1109/DRC.2006.305171}}, year = {{2006}}, }