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Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

Song, Aimin LU ; Missous, M ; Omling, Pär LU ; Peaker, AR ; Samuelson, Lars LU and Seifert, Werner LU (2003) In Applied Physics Letters 83(9). p.1881-1883
Abstract
By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. (C) 2003 American... (More)
By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. (C) 2003 American Institute of Physics. (Less)
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
83
issue
9
pages
1881 - 1883
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000184992000065
  • scopus:0141634015
ISSN
0003-6951
DOI
10.1063/1.1606881
language
English
LU publication?
yes
id
6175f1c0-b182-4245-bf16-877d13b2f35e (old id 302348)
date added to LUP
2016-04-01 12:32:59
date last changed
2025-04-04 13:57:40
@article{6175f1c0-b182-4245-bf16-877d13b2f35e,
  abstract     = {{By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. (C) 2003 American Institute of Physics.}},
  author       = {{Song, Aimin and Missous, M and Omling, Pär and Peaker, AR and Samuelson, Lars and Seifert, Werner}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{1881--1883}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device}},
  url          = {{http://dx.doi.org/10.1063/1.1606881}},
  doi          = {{10.1063/1.1606881}},
  volume       = {{83}},
  year         = {{2003}},
}