Characterization of emerging non-volatile cryogenic memories
(2024)- Abstract
- In this thesis, two emerging non-volatile memories, being the resistive random access memory and a ferroelectric capacitor were characterized at cryogenic temperatures. This was carried out due to the demand for non-volatile CMOS compatible cryogenic memories for quantum computing applications. Both devices exhibit good switching characteristics, endurance >10^7 cycles and multilevel capability. Making both of them viable options.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/6463d48f-64d3-463c-a7ba-0a0feef2ee1b
- author
- Mamidala, Karthik Ram LU
- supervisor
- organization
- publishing date
- 2024-10-28
- type
- Thesis
- publication status
- published
- subject
- keywords
- Cryogenic electronics, Non-volatile memory, RRAM, Ferroelectric, III-V Metal-oxide-semiconductor
- language
- English
- LU publication?
- yes
- id
- 6463d48f-64d3-463c-a7ba-0a0feef2ee1b
- alternative location
- https://lup.lub.lu.se/student-papers/search/publication/9135036
- date added to LUP
- 2025-03-05 13:34:09
- date last changed
- 2025-04-04 14:52:40
@misc{6463d48f-64d3-463c-a7ba-0a0feef2ee1b,
abstract = {{In this thesis, two emerging non-volatile memories, being the resistive random access memory and a ferroelectric capacitor were characterized at cryogenic temperatures. This was carried out due to the demand for non-volatile CMOS compatible cryogenic memories for quantum computing applications. Both devices exhibit good switching characteristics, endurance >10^7 cycles and multilevel capability. Making both of them viable options.}},
author = {{Mamidala, Karthik Ram}},
keywords = {{Cryogenic electronics; Non-volatile memory; RRAM; Ferroelectric; III-V Metal-oxide-semiconductor}},
language = {{eng}},
month = {{10}},
title = {{Characterization of emerging non-volatile cryogenic memories}},
url = {{https://lup.lub.lu.se/student-papers/search/publication/9135036}},
year = {{2024}},
}