Nanowire field-effect transistor
(2007) In Japanese Journal of Applied Physics 46(4B). p.2629-2631- Abstract
- A new processing scheme for the fabrication of sub-100-nm-gate-length vertical nanowire transistors has been developed. InAs transistors with an 11 x 11 nanowire matrix and 80 nm gate length have been realized by this process. The gate length is directly controlled via the thickness of the evaporated gate metal and is thus easily scalable. The demonstrated devices operate in depletion mode, and they show a maximum drive current of about 1 mA and a maximum transconductance of 0.52 mS at V-g = -0.5 V and V-d = 1 V.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/650906
- author
- Wernersson, Lars-Erik
LU
; Lind, Erik
LU
; Samuelson, Lars LU ; Lowgren, Truls and Ohlsson, Jonas
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- transistor, wrap gate, nanowire, InAs, MISFET
- in
- Japanese Journal of Applied Physics
- volume
- 46
- issue
- 4B
- pages
- 2629 - 2631
- publisher
- IOP Publishing
- external identifiers
-
- wos:000247050200172
- scopus:34547856686
- ISSN
- 0021-4922
- DOI
- 10.1143/JJAP.46.2629
- language
- English
- LU publication?
- yes
- id
- cac2f63e-8c5e-4165-be41-22dae7e22df8 (old id 650906)
- date added to LUP
- 2016-04-01 11:57:57
- date last changed
- 2024-01-08 03:07:02
@article{cac2f63e-8c5e-4165-be41-22dae7e22df8, abstract = {{A new processing scheme for the fabrication of sub-100-nm-gate-length vertical nanowire transistors has been developed. InAs transistors with an 11 x 11 nanowire matrix and 80 nm gate length have been realized by this process. The gate length is directly controlled via the thickness of the evaporated gate metal and is thus easily scalable. The demonstrated devices operate in depletion mode, and they show a maximum drive current of about 1 mA and a maximum transconductance of 0.52 mS at V-g = -0.5 V and V-d = 1 V.}}, author = {{Wernersson, Lars-Erik and Lind, Erik and Samuelson, Lars and Lowgren, Truls and Ohlsson, Jonas}}, issn = {{0021-4922}}, keywords = {{transistor; wrap gate; nanowire; InAs; MISFET}}, language = {{eng}}, number = {{4B}}, pages = {{2629--2631}}, publisher = {{IOP Publishing}}, series = {{Japanese Journal of Applied Physics}}, title = {{Nanowire field-effect transistor}}, url = {{http://dx.doi.org/10.1143/JJAP.46.2629}}, doi = {{10.1143/JJAP.46.2629}}, volume = {{46}}, year = {{2007}}, }