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Nanowire field-effect transistor

Wernersson, Lars-Erik LU ; Lind, Erik LU ; Samuelson, Lars LU ; Lowgren, Truls and Ohlsson, Jonas (2007) In Japanese Journal of Applied Physics 46(4B). p.2629-2631
Abstract
A new processing scheme for the fabrication of sub-100-nm-gate-length vertical nanowire transistors has been developed. InAs transistors with an 11 x 11 nanowire matrix and 80 nm gate length have been realized by this process. The gate length is directly controlled via the thickness of the evaporated gate metal and is thus easily scalable. The demonstrated devices operate in depletion mode, and they show a maximum drive current of about 1 mA and a maximum transconductance of 0.52 mS at V-g = -0.5 V and V-d = 1 V.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
transistor, wrap gate, nanowire, InAs, MISFET
in
Japanese Journal of Applied Physics
volume
46
issue
4B
pages
2629 - 2631
publisher
Japan Society of Applied Physics
external identifiers
  • wos:000247050200172
  • scopus:34547856686
ISSN
0021-4922
DOI
10.1143/JJAP.46.2629
language
English
LU publication?
yes
id
cac2f63e-8c5e-4165-be41-22dae7e22df8 (old id 650906)
date added to LUP
2007-12-19 15:50:25
date last changed
2017-01-01 04:42:34
@article{cac2f63e-8c5e-4165-be41-22dae7e22df8,
  abstract     = {A new processing scheme for the fabrication of sub-100-nm-gate-length vertical nanowire transistors has been developed. InAs transistors with an 11 x 11 nanowire matrix and 80 nm gate length have been realized by this process. The gate length is directly controlled via the thickness of the evaporated gate metal and is thus easily scalable. The demonstrated devices operate in depletion mode, and they show a maximum drive current of about 1 mA and a maximum transconductance of 0.52 mS at V-g = -0.5 V and V-d = 1 V.},
  author       = {Wernersson, Lars-Erik and Lind, Erik and Samuelson, Lars and Lowgren, Truls and Ohlsson, Jonas},
  issn         = {0021-4922},
  keyword      = {transistor,wrap gate,nanowire,InAs,MISFET},
  language     = {eng},
  number       = {4B},
  pages        = {2629--2631},
  publisher    = {Japan Society of Applied Physics},
  series       = {Japanese Journal of Applied Physics},
  title        = {Nanowire field-effect transistor},
  url          = {http://dx.doi.org/10.1143/JJAP.46.2629},
  volume       = {46},
  year         = {2007},
}