Planar hall effect in ferromagnetic (Ga,Mn)As/GaAs superlattices
(2007) XXXVI International School on Physics of Semiconducting Compounds 112(2). p.369-373- Abstract
- The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ca,Mn)As/CaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magneto crystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane (100) directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/655547
- author
- Wesela, W. ; Wosinski, T. ; Makosa, A. ; Figielski, T. ; Sadowski, Janusz LU ; Terki, F. and Charar, S.
- organization
- publishing date
- 2007
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- ACTA PHYSICA POLONICA A
- volume
- 112
- issue
- 2
- pages
- 369 - 373
- publisher
- Polish Academy of Sciences
- conference name
- XXXVI International School on Physics of Semiconducting Compounds
- conference location
- Jaszowiec, Poland
- conference dates
- 2007-06-09 - 2007-06-15
- external identifiers
-
- wos:000250180300040
- scopus:35348846778
- ISSN
- 0587-4246
- language
- English
- LU publication?
- yes
- id
- 4e814fe2-c0ef-4952-b71b-b386292a4170 (old id 655547)
- alternative location
- http://przyrbwn.icm.edu.pl/APP/ABSTR/112/a112-2-40.html
- date added to LUP
- 2016-04-01 15:57:42
- date last changed
- 2022-03-22 07:27:24
@inproceedings{4e814fe2-c0ef-4952-b71b-b386292a4170, abstract = {{The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ca,Mn)As/CaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magneto crystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane (100) directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.}}, author = {{Wesela, W. and Wosinski, T. and Makosa, A. and Figielski, T. and Sadowski, Janusz and Terki, F. and Charar, S.}}, booktitle = {{ACTA PHYSICA POLONICA A}}, issn = {{0587-4246}}, language = {{eng}}, number = {{2}}, pages = {{369--373}}, publisher = {{Polish Academy of Sciences}}, title = {{Planar hall effect in ferromagnetic (Ga,Mn)As/GaAs superlattices}}, url = {{http://przyrbwn.icm.edu.pl/APP/ABSTR/112/a112-2-40.html}}, volume = {{112}}, year = {{2007}}, }